4.6 Article

Metal-insulator transition and resistive switching in Y-doped CeO2 ceramics

Journal

PHYSICAL CHEMISTRY CHEMICAL PHYSICS
Volume 25, Issue 48, Pages 33056-33063

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d3cp03562j

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Y-doped ceria shows resistive switching under a small applied voltage, and the effect is enhanced in reduced conditions.
Y-doped ceria, Y0.16Ce0.84O1.92, is an oxide ion conductor that shows n-type conductivity under a small applied voltage. With increasing voltage, resistive switching by 2-3 orders of magnitude occurs that is reversible with some hysteresis and is enhanced in atmospheres of reduced pO(2). The switching is a bulk effect, is not associated with Schottky barriers or with a crystallographic transition, occurs rapidly after a premonitory onset period depending on conditions and shows characteristics of a Mott transition. This is the third known example of low field-induced resistive switching in a bulk ceramic and represents an emergent phenomenon in materials that are taken outside their zone of thermodynamic stability.

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