4.6 Article

Helicity-Dependent Photovoltaic Effect in Bi2Se3 Under Normal Incident Light

Journal

ADVANCED OPTICAL MATERIALS
Volume 4, Issue 10, Pages 1642-1650

Publisher

WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201600301

Keywords

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Funding

  1. A*STAR's Pharos Programme on Topological Insulators, Ministry of Education-Singapore Academic Research Fund Tier 1 [R-263-000-B47-112]
  2. Office of Naval Research [N000141210456]
  3. A*STAR's Pharos Programme on Topological Insulators, Ministry of Education-Singapore Academic Research Fund Tier 2 [R-263-000-B10-112]
  4. Gordon and Betty Moore Foundation's EPiQS Initiative [GBMF4418]

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Topological insulators (TIs) form a new class of materials with an insulating bulk and conducting surfaces ensured by topologically protected surface states (TPSS). The impact of the helicity of a normally incident laser beam on the photovoltaic effect in the TI Bi2Se3 is investigated. The observation of a helicity-dependent photovoltaic effect for normally incident light indicates the presence of out-of-plane spin components for some TPSSs due to the hexagonal warping. In addition, fluctuations in the electrostatic potential at the surface locally break the rotational symmetry of the film allowing the helicity-dependent photovoltaic effect. Our result suggests that engineering local electrostatic potentials in Bi2Se3 would allow the control of optically generated spin currents, which may be useful for applications in spin-optoelectronics.

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