Journal
ADVANCED OPTICAL MATERIALS
Volume 4, Issue 12, Pages 2063-2067Publisher
WILEY-V C H VERLAG GMBH
DOI: 10.1002/adom.201600513
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Funding
- SHINES, an Energy Frontier Research Center - US Department of Energy, Office of Science, Basic Energy Sciences [SC0012670]
- China Scholarship Council
- National Natural Science Foundation of China [11304127]
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Au/ZnO microwire Schottky diodes are fabricated. The devices exhibit typical Schottky diode I-V behavior with a turn-on voltage of about 0.72 V. The hexagonal ZnO microwires act as whispering gallery mode (WGM) lasing microcavities. Under forward bias, a three-microwire device exhibits WGM ultraviolet lasing spectra with a quality factor of about 1287. Output power of the laser has been measured at various injection currents, indicating threshold behavior with a threshold current of about 59 mA. Due to limited hole injection in the operation of Schottky diode, the lasing is a result of an excitonic recombination within the WGM cavity.
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