4.8 Article

Macroscopic piezoelectricity of an MAPbI3 semiconductor and its associated multifunctional device

Journal

NANO ENERGY
Volume 118, Issue -, Pages -

Publisher

ELSEVIER
DOI: 10.1016/j.nanoen.2023.108980

Keywords

Halide perovskite semiconductor; Piezoelectric semiconductor; Piezoelectric coefficient d 33; Photodetector

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In this study, a fully polarized MAPbI3 single crystal with macroscopic piezoelectric and ferroelectric properties was achieved. A multifunctional device was prepared by growing interdigital electrodes on the crystal surface, which could sense pressure and detect incident light simultaneously.
Lead halide perovskite MAPbI3 is an excellent semiconductor with an extremely long minority carrier lifetime, a long diffusion length, good light absorption, and a small bandgap of -1.55 eV. However, it is challenging to exploit the merits of its semiconductor, piezoelectric, and ferroelectric properties simultaneously. Here, an MAPbI3 single crystal is fully polarized by a series of pulsed electric fields, and its macroscopic piezoelectric and ferroelectric properties are confirmed. The piezoelectric d33 coefficient is over 7 pC/N, and the ferroelectric polarization is -2 mu C/cm2 in the tetragonal MAPbI3 crystal at room temperature. Furthermore, two interdigital electrodes are grown on the smooth surface of the MAPbI3 single crystal to prepare a multifunctional device that can sense pressure through the d31 coefficient and/or detect incident light. The detectivity of such a photodetector is as high as 7.1 x 1014 cm & sdot;Hz1/2 & sdot;W- 1 for 450-nm light. This study opens the door to developing novel multifunctional devices with single-phase piezoelectric semiconductors to realize transformations between light, force, and electrical signals.

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