4.4 Article

A gate-tunable memristor emulator for motion detection

Publisher

WILEY
DOI: 10.1002/cta.3888

Keywords

emulator; gate-tunable memristor; memristor model; motion detection

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This study proposes a digital gate-tunable memristor emulator based on Raspberry Pi, which solves the non-reconfigurability and inflexibility issues of analog emulators by regulating the gate voltage parameter. Experimental results demonstrate that the emulator has low power consumption and short delay in motion detection.
With its low power consumption and small size, the memristor has shown great potential for improving data storage density and computing efficiency. Compared to the dual-port memristor, greater attention should be paid to researching gate-tunable memristor for image processing to improve the processing speed and reduce hardware resource consumption. Developing gate-tunable memristor emulators is highly attractive given the immaturity of current fabrication of the gate-tunable memristor. This work proposes a digital gate-tunable memristor emulator based on Raspberry Pi, which addresses the non-reconfigurability and inflexibility issues of the analog emulators. The proposed emulator can match the behavior of different memristor devices by regulating the gate voltage parameter. Additionally, it can operate at a maximum frequency of 500 MHz. To test the functionality of the proposed emulator, a digital implementation of the memristive circuit for motion detection is designed and verified experimentally. Experiments demonstrate that when moving object detection is performed on a 640 x 350 pixel video stream, low power consumption of 53 mW and a delay of 3.52 mu s can be achieved. This paper proposes a digital gate-tunable memristor model based on Raspberry PI that matches the behavior of different memristor devices. Comprehensive verification with Raspberry PI 4B is used to demonstrate the benefits of the model. A gate-tunable memristor crossbar array is constructed for moving object detection with low power consumption of 53 mW and a delay of 3.52 mu s.image

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