An Electrically Resistive Switching Nonvolatile Memory System Based on PEDOT:PSS

The current density-voltage (J-V) curves of poly(3,4-ethylenedioxythiophene) polystyrene sulfonate (PEDOT:PSS) are examined at room temperature, which reveal nonlinear behavior and hysteresis loop-like patterns. Herein, the potential of the material for nonvolatile applications requiring resistive random access memory (ReRAM) is demonstrated. The resistive switching effect is explained using a Schottky barrier and the space-charge-limited conduction model. Additionally, dielectric and electrical characteristics are analyzed in the frequency range from 20 Hz to 10 MHz. The impedance, electric modulus, dielectric loss tangent, and AC conductivity are explored through On- and Off-states of resistive switching. A modified Debye function and Jonscher's power law are used for data fitting. The resistive switching memory behavior of PEDOT:PSS are studied using J-V and chemical impedance spectroscopy (CIS) measurements. The Cu/PEDOT:PSS/Cu sandwich-type devices show bipolar switching behavior, and an equivalent circuit model based on the impedance spectra is proposed to describe the CIS response in both states. The switching process is attributed to the electrical-field-induced effect of dipolar reorientation on the electrical conductivity of PEDOT:PSS at grain boundaries.

Automated summary

In this study, the J-V curves of PEDOT:PSS were examined, revealing nonlinear behavior and hysteresis loop-like patterns. The potential of PEDOT:PSS for resistive random access memory (ReRAM) was demonstrated. The resistive switching effect was explained using a Schottky barrier and space-charge-limited conduction model. Dielectric and electrical characteristics were also analyzed, and a modified Debye function and Jonscher's power law were used for data fitting.