Enhancement-Mode Phototransistors Based on β-Ga2O3 Microflakes Fabricated by Focused Ion Beams

This study introduces focused ion beam (FIB) processing for the first time to etch and thin beta-Ga2O3 microflakes, while exploring the effect of their thicknesses on the phototransistor performance. It is found that when the beta-Ga2O3 microflakes reach a certain thickness, the phototransistors switch from the depletion mode to the enhancement mode, exhibiting extremely low dark current without a gate voltage. The enhancement-mode phototransistor prepared using this method demonstrates a photo-dark current ratio as high as 2.3 x 10(5), a responsivity of 6.3 x 10(4) A W-1, and an external quantum efficiency of 3.1 x 10(7)% when irradiated with incident light at a wavelength of 254 nm and a power density of 8 mu W cm(-2). Additionally, the device has a rise time of 43 ms and a fall time of 28 ms, respectively. By using FIB processing to etch and thin beta-Ga2O3 microflakes, this study effectively overcomes the poor controllability and low repeatability associated with the traditional mechanical exfoliation method, as well as the residual impurities from the plasma etching method. This opens up a new avenue for fabricating the high-performance, low-dimensional phototransistors based on beta-Ga2O3 with high repeatability and controllability.

Automated summary

This study introduces focused ion beam (FIB) processing to etch and thin beta-Ga2O3 microflakes, revealing the impact of thickness on phototransistor performance. The enhanced phototransistor produced using this method demonstrates excellent photo-electric properties and overcomes the limitations of traditional fabrication methods.