4.2 Article

E-mode AlGaN/GaN HEMTs using p-NiO gates

Journal

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B
Volume 41, Issue 6, Pages -

Publisher

A V S AMER INST PHYSICS
DOI: 10.1116/6.0003119

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Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. The utility of NiO gates in increasing the on-off ratio and shifting the threshold voltage in comparison to Schottky gates was demonstrated.
Sputtered p-NiO films were used to suppress gate leakage and produce a positive shift in the gate voltage of AlGaN/GaN high-electron mobility transistors for e-mode operation. A direct comparison with Schottky-gated devices fabricated on the same wafer shows the utility of the NiO in increasing the on-off ratio and shifting the threshold voltage from -0.95 V (Schottky gated) to +0.9 V (NiO gated). The breakdown voltage was 780 V for a 40 mu m drain-source separation. The subthreshold swing decreased from 181 mV/dec for Schottky-gated HEMTs to 128 mV/dec on NiO-gated devices. The simple fabrication process without any annealing or passivation steps shows the promise of NiO gates for e-mode AlGaN/GaN HEMT operation.

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