Ferroelectric Resistance Switching in Epitaxial BiFeO3/La0.7Sr0.3MnO3 Heterostructures

BiFeO3/La0.7Sr0.3MnO3 (BFO/LSMO) epitaxial heterostructures were successfully synthesized by pulsed laser deposition on (001)-oriented SrTiO3 single-crystal substrates with Au top electrodes. Stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal was observed in the Au/BFO/LSMO heterostructures. The conduction mechanism was revealed to follow the Schottky emission model, and the Schottky barriers in high-resistance and low-resistance states were estimated based on temperature-dependent current-voltage curves. Further, the observed memristive behavior was interpreted via the modulation effect on the depletion region width and the Schottky barrier height caused by ferroelectric polarization reversal, combining with the oxygen vacancies migration near the BFO/LSMO interface.

Automated summary

In this study, BiFeO3/La0.7Sr0.3MnO3 heterostructures were successfully synthesized and stable bipolar resistive switching characteristics regulated by ferroelectric polarization reversal were observed. The conduction mechanism followed the Schottky emission model, and the memristive behavior was explained by the modulation effect on the depletion region width and Schottky barrier height caused by ferroelectric polarization reversal.