Brightening and Directionality Control of Dark Excitons through Quasi-Bound States in the Continuum

Thanks to their long lifetime, spin-forbidden dark excitons in transition metal dichalcogenides are promising candidates for storage applications in opto-electronics and valleytronics. To date, their study has been hindered by inefficient generation mechanisms and the necessity for elaborate detection schemes. In this work, we propose a new hybrid platform that simultaneously addresses both challenges. We study an all-dielectric metasurface with two symmetrically protected quasi-bound states in the continuum to enhance both the excitation and emission of dark excitons in a tungsten diselenide monolayer under normal light incidence. Our simulations show a giant photoluminescence signal enhancement (similar to 520) along with directional emission, thus offering distinct advantages for opto-electronic and valleytronic devices.

Automated summary

This study proposes a new hybrid platform to enhance the excitation and emission of dark excitons in transition metal dichalcogenides, offering distinct advantages for opto-electronic and valleytronic devices.