Journal
MRS COMMUNICATIONS
Volume 6, Issue 4, Pages 348-353Publisher
CAMBRIDGE UNIV PRESS
DOI: 10.1557/mrc.2016.50
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Funding
- Center for the Next Generation of Materials by Design, an Energy Frontier Research Center
- U.S. Department of Energy, Office of Science, Basic Energy Sciences [DE-AC36-08GO28308]
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Beta-gallium oxide (beta-Ga2O3) is of increasing interest to the optoelectronic community for transparent conductor and power electronic applications. Considerable variability exists in the literature on the growth and doping of Ga2O3 films, especially as a function of growth approach, temperature, and oxygen partial pressure. Here pulsed laser deposition (PLD) was used to grow high-quality beta-Ga2O3 films on (0001) sapphire and (-201) Ga2O3 single crystals and to explore the growth, stability, and dopability of these films as function of temperature and oxygen partial pressure. There is a strong temperature dependence to the phase formation, morphology, and electronic properties of beta-Ga2O3 from 350 to 550 degrees C.
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