4.6 Article

Disentangling stress and strain effects in ferroelectric HfO2

Related references

Note: Only part of the references are listed.
Article Materials Science, Multidisciplinary

Ferroelectricity Induced by Oxygen Vacancies in Rhombohedral ZrO2 Thin Films

Veniero Lenzi et al.

Summary: In this study, it is found that oxygen vacancies in rhombohedral ZrO2 thin films not only stabilize the phase, but also contribute to the ferroelectric polarization. Experimental investigation, coupled with density functional theory calculations, reveals the importance of oxygen vacancies for stabilizing rhombohedral ZrO2 thin films with superior ferroelectric properties.

ENERGY & ENVIRONMENTAL MATERIALS (2023)

Article Chemistry, Physical

Ferroelectricity in HfO2 from a Coordination Number Perspective

Jun-Hui Yuan et al.

Summary: Ferroelectricity in thin-film HfO2 and ZrO2 is attributed to the 7 cation coordination number, which is influenced by the proper ionic radii of Hf/Zr compared with O. The 8-coordination tetragonal intermediate phase plays a significant role in reducing the switching barrier, leading to ferroelectric distortion.

CHEMISTRY OF MATERIALS (2023)

Article Physics, Applied

Applied in-plane strain effects on the polarization response of ferroelectric hafnium zirconium oxide thin films

Jon F. Ihlefeld et al.

Summary: The influence of biaxial stress on the maximum and remanent polarizations of 10 nm thick hafnium zirconium oxide thin films has been studied. It was found that reducing the intrinsic strain through the application of a compressive uniaxial stress resulted in a decrease in the remanent and maximum polarizations. The observed variation in polarization with strain is consistent with strain impacting ferroelastic switching.

APPLIED PHYSICS LETTERS (2023)

Article Materials Science, Multidisciplinary

Epitaxial ferroelectric hafnia stabilized by symmetry constraints

Tianyuan Zhu et al.

Summary: Ferroelectric memories have seen a resurgence due to the discovery of ferroelectricity in HfO2-based nanometer-thick films. These films have excellent silicon compatibility and overcome the challenges faced by perovskite ferroelectrics in high-density integrated circuits. The exact phase responsible for ferroelectricity in hafnia films is still debated, but researchers have used computational methods to identify specific epitaxial conditions that thermodynamically favor the polar Pca21 phase. The strain-stability phase diagrams help resolve discrepancies between experiments and theory and can guide the improvement of ferroelectric properties in epitaxial hafnia thin films.

PHYSICAL REVIEW B (2023)

Article Materials Science, Multidisciplinary

Large enhancement of ferroelectric polarization in Hf0.5Zr0.5O2 films by low plasma energy pulsed laser deposition

Tingfeng Song et al.

Summary: The study investigates the enhanced polarization of epitaxial films of Hf0.5Zr0.5O2 by combining inert Ar gas with oxidizing O-2 gas. The simple growth process allows for a significant increase in ferroelectric polarization up to about 30 μC cm(-2), representing a 50% increase compared to conventional pulsed laser deposition.

JOURNAL OF MATERIALS CHEMISTRY C (2022)

Article Chemistry, Multidisciplinary

Large-Scale Hf0.5Zr0.5O2 Membranes with Robust Ferroelectricity

Hai Zhong et al.

Summary: Hafnia-based compounds exhibit ferroelectricity and have potential applications in nanoelectronics. In this study, centimeter-scale Hf0.5Zr0.5O2 nanomembranes were prepared and the ferroelectric orthorhombic phase was observed. Capacitors fabricated on flexible substrates using these membranes showed high uniformity, stability, and robustness. The freestanding membranes provide a platform for exploring complex structures in hafnia polymorphic films and advancing flexible nanoelectronics.

ADVANCED MATERIALS (2022)

Article Physics, Applied

Switching pathway-dependent strain-effects on the ferroelectric properties and structural deformations in orthorhombic HfO2

Wei Wei et al.

Summary: This study investigates the polarization switching pathways of orthorhombic HfO2 through first-principles calculations, revealing the importance of interface termination in determining the existence of two switching pathways and showing that the SA pathway has higher critical values. The application of lattice strains can induce a ferroelectric-paraelectric phase transition, but the trends of P-s and E-b under the same lattice strains vary depending on the switching pathways. However, strain engineering can efficiently improve E-b and P-s for both pathways in o-HfO2 films by carefully designing interfacial tail atoms.

JOURNAL OF APPLIED PHYSICS (2022)

Review Nanoscience & Nanotechnology

The fundamentals and applications of ferroelectric HfO2

Uwe Schroeder et al.

Summary: This Review summarizes the properties and origin of ferroelectricity in HfO2-based materials, discusses the thermodynamic and kinetic factors influencing the formation of the ferroelectric phase, and evaluates their potential applications. Through concerted efforts, academia and industry have improved our understanding of the material properties and root causes of the unexpected formation of the ferroelectric phase, paving the way for inducing the polar phase even in bulk materials.

NATURE REVIEWS MATERIALS (2022)

Article Materials Science, Multidisciplinary

Ferroelectric (Hf,Zr,La)O2 films

T. Song et al.

Summary: This study investigates the impact of La, Zr, and Hf content on crystal phases, ferroelectric, and dielectric properties of (Hf, Zr, La) O2 using epitaxial films. The results show that the polarization of La-doped Hf1-xZrxO2 films strongly depends on the La and Zr content. The crystal phases in the films also change with the doping of La and Zr.

APPLIED MATERIALS TODAY (2022)

Article Materials Science, Multidisciplinary

Synergetic contributions of chemical doping and epitaxial stress to polarization in ferroelectric HfO2 films

Tingfeng Song et al.

Summary: Chemical doping and epitaxial stress can synergistically tailor the ferroelectric properties of HfO2 films, potentially leading to improvements in performance.

APPLIED MATERIALS TODAY (2022)

Article Nanoscience & Nanotechnology

Origin of Ferroelectric Phase Stabilization via the Clamping Effect in Ferroelectric Hafnium Zirconium Oxide Thin Films

Shelby S. Fields et al.

Summary: The presence of the top electrode during thermal processing is shown to increase ferroelectric phase fraction and polarization response through larger tensile biaxial stress. Film chemistry, microstructure, and crystallization temperature are not affected. The top electrode inhibits out-of-plane expansion in HZO during crystallization, preventing equilibrium monoclinic phase formation and stabilizing the orthorhombic phase.

ADVANCED ELECTRONIC MATERIALS (2022)

Article Physics, Applied

A Perspective on ferroelectricity in hafnium oxide: Mechanisms and considerations regarding its stability and performance

Jon F. Ihlefeld et al.

Summary: This perspective article discusses the importance of hafnium oxide materials in microelectronic applications and their impact on device performance. The factors and mechanisms influencing phase stability are highlighted, and areas requiring further research are emphasized.

APPLIED PHYSICS LETTERS (2022)

Article Materials Science, Multidisciplinary

Finite-size effects on ferroelectricity in rhombohedral HfO2

Francesco Delodovici et al.

Summary: In this research, the finite-size effects on the structural properties and polarization of rhombohedral phase of HfO2 under biaxial compressive strain are analyzed. The presence of surface charges is shown to greatly reduce the polarization compared to its bulk value, attributed to coupling between compressive strain and phase-transition order parameter, as well as changes in ferroelectric distortion. Additionally, two alternative explanations for this phenomenon are presented.

PHYSICAL REVIEW B (2022)

Article Engineering, Electrical & Electronic

Impact of La Concentration on Ferroelectricity of La-Doped HfO2 Epitaxial Thin Films

Tingfeng Song et al.

Summary: Epitaxial thin films of HfO2 doped with La have been grown on SrTiO3(001) and Si(001), and the impact of La concentration on the stabilization of the ferroelectric phase has been determined. Films with 2-5 at. % La doping exhibit the least amount of paraelectric monoclinic and cubic phases, highest polarization, and a remanent polarization above 20 mu C/cm(2). La concentration has a significant effect on the coercive field, which decreases with increasing La content. High polarization, retention, and endurance of at least 10(10) cycles are achieved in 5 at. % La-doped films.

ACS APPLIED ELECTRONIC MATERIALS (2021)

Article Materials Science, Multidisciplinary

Thickness effect on the ferroelectric properties of La-doped HfO2 epitaxial films down to 4.5 nm

Tingfeng Song et al.

Summary: La-doped HfO2 films, even as thin as 4.5 nm, exhibit robust ferroelectric properties including high remanent polarization, slight wake-up, endurance of at least 10(10) cycles, and retention of over 10 years.

JOURNAL OF MATERIALS CHEMISTRY C (2021)

Review Engineering, Electrical & Electronic

Epitaxial Ferroelectric HfO2 Films: Growth, Properties, and Devices

Ignasi Fina et al.

Summary: After ten years of research, there is significant interest in ferroelectric HfO2, especially in epitaxial films. Epitaxial films are seen as having great potential for research and applications due to their fewer defects and more controlled microstructure compared to polycrystalline films.

ACS APPLIED ELECTRONIC MATERIALS (2021)

Article Chemistry, Multidisciplinary

Domain-Matching Epitaxy of Ferroelectric Hf0.5Zr0.5O2(111) on La2/3Sr1/3MnO3(001)

Saul Estandia et al.

CRYSTAL GROWTH & DESIGN (2020)

Article Physics, Applied

Strain effect on the stability in ferroelectric HfO2 simulated by first-principles calculations

Sheng-Ting Fan et al.

JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)

Article Physics, Applied

Effects of Strain and Film Thickness on the Stability of the Rhombohedral Phase of HfO2

Yuke Zhang et al.

PHYSICAL REVIEW APPLIED (2020)

Article Engineering, Electrical & Electronic

Influence of Oxygen Content on the Structure and Reliability of Ferroelectric HfxZr1-xO2 Layers

Monica Materano et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Article Engineering, Electrical & Electronic

Epitaxial Ferroelectric La-Doped Hf0.5Zr0.5O2 Thin Films

Tingfeng Song et al.

ACS APPLIED ELECTRONIC MATERIALS (2020)

Review Materials Science, Multidisciplinary

Review of defect chemistry in fluorite-structure ferroelectrics for future electronic devices

Min Hyuk Park et al.

JOURNAL OF MATERIALS CHEMISTRY C (2020)

Article Materials Science, Multidisciplinary

Effects of growth orientations and epitaxial strains on phase stability of HfO2 thin films

Shi Liu et al.

PHYSICAL REVIEW MATERIALS (2019)

Review Physics, Applied

Recent progress for obtaining the ferroelectric phase in hafnium oxide based films: impact of oxygen and zirconium

Uwe Schroeder et al.

JAPANESE JOURNAL OF APPLIED PHYSICS (2019)

Article Nanoscience & Nanotechnology

Epitaxial Integration on Si(001) of Ferroelectric Hf0.5Zr0.5O2 Capacitors with High Retention and Endurance

Jike Lyu et al.

ACS APPLIED MATERIALS & INTERFACES (2019)

Review Nanoscience & Nanotechnology

Thermodynamic and Kinetic Origins of Ferroelectricity in Fluorite Structure Oxides

Min Hyuk Park et al.

ADVANCED ELECTRONIC MATERIALS (2019)

Article Engineering, Electrical & Electronic

Growth Window of Ferroelectric Epitaxial Hf0.5Zr0.5O2 Thin Films

Jike Lyu et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

Article Engineering, Electrical & Electronic

Engineering Ferroelectric Hf0.5Zr0.5O2 Thin Films by Epitaxial Stress

Saul Estandia et al.

ACS APPLIED ELECTRONIC MATERIALS (2019)

Article Multidisciplinary Sciences

Tailoring Lattice Strain and Ferroelectric Polarization of Epitaxial BaTiO3 Thin Films on Si(001)

Jike Lyu et al.

SCIENTIFIC REPORTS (2018)

Article Physics, Applied

Ferroelectricity mediated by ferroelastic domain switching in HfO2-based epitaxial thin films

Takao Shimizu et al.

APPLIED PHYSICS LETTERS (2018)

Article Chemistry, Physical

Factors Favoring Ferroelectricity in Hafnia: A First-Principles Computational Study

Rohit Batra et al.

JOURNAL OF PHYSICAL CHEMISTRY C (2017)

Article Materials Science, Multidisciplinary

A comprehensive study on the structural evolution of HfO2 thin films doped with various dopants

M. H. Park et al.

JOURNAL OF MATERIALS CHEMISTRY C (2017)

Article Physics, Applied

Impact of mechanical stress on ferroelectricity in (Hf0.5Zr0.5)O2 thin films

Takahisa Shiraishi et al.

APPLIED PHYSICS LETTERS (2016)

Article Chemistry, Multidisciplinary

Ferroelectricity and Antiferroelectricity of Doped Thin HfO2-Based Films

Min Hyuk Park et al.

ADVANCED MATERIALS (2015)

Article Engineering, Electrical & Electronic

Confinement-free annealing induced ferroelectricity in Hf0.5Zr0.5O2 thin films

A. Chernikova et al.

MICROELECTRONIC ENGINEERING (2015)

Article Physics, Applied

Stabilizing the ferroelectric phase in doped hafnium oxide

M. Hoffmann et al.

JOURNAL OF APPLIED PHYSICS (2015)

Article Chemistry, Physical

Solid-state flexible polyaniline/silver cellulose nanofibrils aerogel supercapacitors

Xiaodan Zhang et al.

JOURNAL OF POWER SOURCES (2014)

Article Materials Science, Multidisciplinary

Elastic strain engineering of ferroic oxides

Darrell G. Schlom et al.

MRS BULLETIN (2014)

Article Thermodynamics

Efficient stochastic generation of special quasirandom structures

A. van de Walle et al.

CALPHAD-COMPUTER COUPLING OF PHASE DIAGRAMS AND THERMOCHEMISTRY (2013)

Article Physics, Applied

Ferroelectricity in hafnium oxide thin films

T. S. Boescke et al.

APPLIED PHYSICS LETTERS (2011)

Article Physics, Multidisciplinary

Restoring the density-gradient expansion for exchange in solids and surfaces

John P. Perdew et al.

PHYSICAL REVIEW LETTERS (2008)

Article Physics, Multidisciplinary

Nonequilibrium interlayer transport in pulsed laser deposition

J. Z. Tischler et al.

PHYSICAL REVIEW LETTERS (2006)

Article Multidisciplinary Sciences

Enhancement of ferroelectricity in strained BaTiO3 thin films

KJ Choi et al.

SCIENCE (2004)

Review Chemistry, Physical

Epitaxial stabilization of oxides in thin films

OY Gorbenko et al.

CHEMISTRY OF MATERIALS (2002)