Split-Channel Dual-Gate High Voltage Thin Film Transistors

High-voltage thin film transistors (HVTFTs) have potential applications for driving high-voltage devices. Drain offset is a typical HVTFT structure but degrades ON-current. In this study, a-IGZO split-channel dual-gate HVTFTs are explored to achieve both high-voltage and high breakdown voltage. It is found that the dual-gate structure without split-channel improves the ON-current of offset-drain thin film transistors (TFTs) but degrades the breakdown voltage. Experiment results show that high ON-current induced thermal breakdown is the main reason limiting the breakdown voltage of dual-gate HVTFTs. The split-channel structure is introduced to enhance the heat dissipation and thus dual-gate HVTFTs with higher breakdown voltage were obtained. Split-channel dual-gate HVTFTs were fabricated with a breakdown voltage of 464 V, ON-current of 61.60 mu A, threshold voltage of- 1.0 V, and subthreshold swing of 0.38 V/dec. This study demonstrates that split-channel dual-gate HVTFTs are a promising candidate for high-voltage and high ON-current TFT.

Automated summary

This study explores a-IGZO split-channel dual-gate high-voltage thin film transistors (HVTFTs) with potential applications for high-voltage and high breakdown voltage. The typical HVTFT structure of drain offset degrades ON-current. Experimental results show that high ON-current induced thermal breakdown is the main reason limiting the breakdown voltage of dual-gate HVTFTs. The introduction of split-channel structure enhances heat dissipation and achieves higher breakdown voltage for dual-gate HVTFTs.