Related references
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Article
Multidisciplinary Sciences
Weisheng Li et al.
Summary: By hybridizing with semi-metallic antimony (0112) through strong van der Waals interactions, the electrical contact of monolayer molybdenum disulfide is improved, meeting the requirements for the development of next-generation electronics.
Review
Chemistry, Multidisciplinary
Yan Yin et al.
Summary: The discovery of 2D layered MoSi2N4 and WSi2N4 in 2020 has led to extensive studies on the 2D MA(2)Z(4) system. This overview provides a comprehensive summary of the progress in this family, including its unique structural characteristics and versatile properties. It also discusses various methods for tuning properties, as well as the theoretical and experimental applications in transistors, photocatalysts, batteries, and gas sensors. The overview offers insights and prospects for further exploration of the 2D MA(2)Z(4) system.
ADVANCED FUNCTIONAL MATERIALS
(2023)
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Chemistry, Physical
Aarti Shukla et al.
Summary: The 2D 1T-2H-phase of Mo2B and its functionalized derivatives Mo2BX2 (X= H, OH, O) have been found to be dynamically and thermally stable and possess metallic nature in both phases. Pristine MBenes are desirable adsorbents for NO2, SO2, and CO2 capture, while functionalized MBenes-NH3 systems show moderate adsorption energies, indicating good sensitivity for NH3 gas detection. 2H-Mo2BH2 exhibits higher CT (-0.11e) and appropriate adsorption energy (-0.30 eV), resulting in a shorter recovery time. The electrical conducting behavior of MBenes makes them suitable for NH3 detection with a short recovery time.
APPLIED SURFACE SCIENCE
(2023)
Article
Physics, Applied
Tong Su et al.
Summary: Recent experiments have demonstrated that semimetal bismuth (Bi) is an excellent electrical contact to monolayer MoS2 with ultralow contact resistance. However, the contact physics of other semimetal/monolayer-semiconductor systems remains largely unexplored. In this study, we investigate the electrical contact properties between six two-dimensional transition metal dichalcogenides (TMDCs) and two representative semimetals, Bi and antimony (Sb), using density functional theory. We find that weak metalization occurs at the semimetal/TMDC interfaces, generating semimetal-induced gap states (SMIGSs) below the conduction band minimum and effectively reducing the n-type Schottky barrier height. We propose a modified Schottky-Mott rule that considers SMIGS, interface dipole potential, and Fermi level shifting, which improves the agreement with density functional theory simulations of the barrier height. We also show that Sb contacts have lower tunneling-specific resistivity than Bi contacts, indicating better charge injection efficiency. Our findings suggest that Bi and Sb are promising companion electrode materials for advancing 2D semiconductor device technology.
JOURNAL OF PHYSICS D-APPLIED PHYSICS
(2023)
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Chemistry, Multidisciplinary
Son-Tung Nguyen et al.
Summary: van der Waals heterostructures offer a powerful platform for manipulating the electronic properties of two-dimensional materials and exploring exotic physical phenomena. In this study, we created a graphene/BSe heterostructure and investigated its electronic characteristics and the tunability of its contact types under electric fields. Our findings demonstrate that the graphene/BSe heterostructure is stable and forms a p-type Schottky contact with high carrier mobility, making it a promising candidate for future Schottky field-effect transistors. Additionally, applying an electric field allows for the control and manipulation of the heterostructure's electronic properties, including the transition from a p-type to an n-type Schottky contact and from a Schottky to an ohmic contact. These results provide a rational basis for the design of energy-efficient and tunable heterostructure devices based on the graphene/BSe heterostructure.
Review
Materials Science, Multidisciplinary
Saju Joseph et al.
Summary: Transition metal dichalcogenides (TMDs) have emerged as one of the most promising and widely accepted categories of 2D materials. Researchers have been exploring alternative semiconducting 2D materials due to the absence of a bandgap in graphene. TMDs' unique optical and electronic properties have made them excel in fundamental research and novel device applications.
MATERIALS CHEMISTRY AND PHYSICS
(2023)
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Materials Science, Multidisciplinary
Xiaodong Zhang et al.
Summary: By studying the Schottky barrier heights (SBHs) and origin of charge transfer at 2D semiconductor-metal interfaces, researchers have found a way to suppress Fermi-level pinning and achieve wide-range and linear-tunable SBHs.
SCIENCE CHINA-MATERIALS
(2023)
Review
Chemistry, Multidisciplinary
Xiaochi Liu et al.
Summary: This article discusses the impact of Fermi level pinning (FLP) in 2D semiconductor devices and its causes. The authors indicate that FLP is mainly due to inefficient doping into 2D materials, vdW gap at the metal interface, and hybridized compounds formed under contacting metals. The article further explores the effects of FLP on 2D device performance and methods for improving metallic contact to 2D materials.
ADVANCED MATERIALS
(2022)
Review
Chemistry, Multidisciplinary
Phuong Pham et al.
Summary: A comprehensive review on the recent advances in 2D materials and their heterostructures is presented. These materials, discovered through extensive experimental and theoretical efforts, have shown potential applications in high-frequency electronics and broadband optoelectronics. The review focuses on the engineering of 2D heterostructures and 3D-bulk hybrid systems, highlighting their quantum mechanical responses and discussing future trends for electronics and optoelectronics.
Review
Materials Science, Multidisciplinary
Vivek Chaudhary et al.
Summary: Phosphorene, as a 2D material, has unique electronic and optical properties, making it promising for high-speed electronics, optoelectronics, and biomedical applications. This review summarizes its chemical and physical properties, discusses recent progress in synthesis, surveys its application in devices, and outlines the remaining challenges and potential applications of phosphorene.
Article
Physics, Applied
Tong Wu et al.
APPLIED PHYSICS LETTERS
(2022)
Article
Chemistry, Multidisciplinary
Che Chen Tho et al.
Summary: This study demonstrates that the vdWH family composed of MoSi2N4 and WSi2N4 monolayers has the potential to develop high-performance ultrathin excitonic solar cells and photonics devices. MoSi2N4/(InSe, WSe2) are identified as Type II vdWHs with exceptional excitonic solar cell power conversion efficiency reaching over 20%. Additionally, the (Mo,W)Si2N4 vdWH family exhibits strong optical absorption in both the visible and UV regimes, with exceedingly large peak UV absorptions over 40% in (Mo,W)Si2N4/alpha(2)-(Mo,W)Ge2P4 vdWHs.
ADVANCED MATERIALS INTERFACES
(2022)
Article
Physics, Applied
Liemao Cao et al.
Summary: Forming a low-resistance semiconductor-metal contact is crucial for high-performance 2D semiconductor nanoelectronic devices. In this study, the interface contact properties of gamma-GeSe with different metallic systems were computationally investigated. Results showed that these metals exhibited rich contact formation physics with gamma-GeSe, forming heterostructures with weak and moderate couplings. Notably, gamma-GeSe/NbS2 showed an Ohmic contact and gamma-GeSe/Bi showed an n-type Schottky contact with an ultralow barrier height. The electronic properties of gamma-GeSe/graphene contact could be adjusted using interlayer distance or external electric field. Additionally, layer-number engineering of gamma-GeSe allowed further control of contact properties.
APPLIED PHYSICS LETTERS
(2022)
Review
Materials Science, Multidisciplinary
Wenwen Fei et al.
Summary: Two-dimensional materials have become a focus of research for their potential in achieving carrier polarity, threshold voltage control, and multifunctional configurations in electronic devices. This review discusses the working principles and performance improvement metrics for 2D-material-based devices with diverse reconfigurability.
Review
Materials Science, Multidisciplinary
Abbas Ahmed et al.
Summary: This article reviews the latest developments in MXene-enabled flexible electronics for wearable electronics, highlighting several nanoscale MXene-enabled electronic devices and their applications in healthcare, energy, electromagnetic interference shielding, and humanoid control of machines.
Review
Chemistry, Physical
Lingan Kong et al.
Summary: Logic circuits based on 2D semiconductors have shown promising progress in improving device performance and practical applications, including the realization methods for different types of logic circuits, device polarity control, and CMOS approaches. The analysis of the advantages and disadvantages of each method provides insights into the challenges and future developments of 2D logic circuits.
Review
Materials Science, Multidisciplinary
Sekhar Babu Mitta et al.
Summary: 2D materials, with their atomic thinness and rich electronic band structure, show great promise for future nanoelectronics; however, the electrical characterization methods for 2D devices need to be revisited to ensure accuracy and applicability.
Article
Physics, Applied
Liemao Cao et al.
Summary: This study investigates van der Waals heterostructures composed of MoSi2N4 contacted by graphene and NbS2 monolayers using first-principles density functional theory calculations. The results reveal an ultralow Schottky barrier height at the MoSi2N4/NbS2 contact, beneficial for nanoelectronics applications, and show that the Schottky barrier height at the MoSi2N4/graphene contact can be modulated through interlayer distance or external electric fields, opening up opportunities for reconfigurable and tunable nanoelectronic devices.
APPLIED PHYSICS LETTERS
(2021)
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Chemistry, Physical
Manish Kumar Mohanta et al.
Summary: A graphene-based van der Waals heterostructure, including a HfN2 monolayer stacked over graphene, has been studied using density functional theory. The heterostructure shows the potential for high tunability in electrical contacts and doping carrier concentration under external perturbation such as strain and electric field control.
APPLIED SURFACE SCIENCE
(2021)
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Z. Wang et al.
Summary: 2D Mo2B is a stable metal phase with potential as an electrode material for ion batteries, and shows promise as a catalyst for hydrogen evolution.
APPLIED SURFACE SCIENCE
(2021)
Article
Engineering, Electrical & Electronic
R. K. Ratnesh et al.
Summary: This study focuses on the field effect transistors (FET) and their technologies, particularly in the context of very large integration. It addresses the limitations of scaling, ways to resolve them, and includes detailed research on nanoscale transistors like silicon nanowires. The findings are valuable for advancing MOSFET technology and hint at possible future technologies.
MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING
(2021)
Article
Chemistry, Physical
Zhuo Xu et al.
Summary: The study found that the tunable Schottky barrier heights in metal-BA2PbI4 contacts can be adjusted by using different metals with a moderate Fermi level pinning effect, and the interfacial van der Waals interaction-induced Pauli-exclusion effect is responsible for the Fermi level pinning. The unique structure of BA2PbI4 ensures limited influence of interfacial interaction on its band energy.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Article
Chemistry, Physical
Nguyen T. T. Binh et al.
Summary: In this study, ultra-thin van der Waals heterostructures were constructed between graphene and a new 2D Janus MoGeSiN4 material to investigate their interfacial electronic properties and tunable Schottky barriers. The results showed that the graphene/MoGeSiN4 heterostructures have high carrier mobility, making them suitable for high-speed nanoelectronic devices. Depending on the stacking patterns, either an n-type or a p-type Schottky contact is formed at the interface, which can be transformed under strain engineering and electric field.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
(2021)
Review
Engineering, Electrical & Electronic
Saptarshi Das et al.
Summary: This paper examines the development of field-effect transistors based on two-dimensional materials for VLSI technology, highlighting the challenges that need to be addressed such as reducing contact resistance, stable doping schemes, mobility engineering, and high-k dielectric integration. The review emphasizes the importance of large-area growth of uniform 2D layers in ensuring low defect density and clean interfaces. Furthermore, potential applications of 2D transistors in various futuristic technologies are discussed.
NATURE ELECTRONICS
(2021)
Article
Multidisciplinary Sciences
Pin-Chun Shen et al.
Summary: The article discusses achieving ohmic contact between semimetallic bismuth and semiconducting monolayer transition metal dichalcogenides, suppressing metal-induced gap states and significantly reducing contact resistance. Experimental results demonstrate zero Schottky barrier height and high on-state current density on multilayer MoS2.
Review
Physics, Multidisciplinary
Yangyang Wang et al.
Summary: Over the past decade, two-dimensional semiconductors have attracted wide interest due to their extraordinary properties, with field-effect transistors being commonly used as the device geometry. Direct metal contact is often utilized in 2DSC FETs due to the lack of effective doping techniques. The presence of a Schottky barrier in the metal-2DSC junction significantly impacts the performance of most 2DSC FETs, emphasizing the importance of low SB contacts.
REPORTS ON PROGRESS IN PHYSICS
(2021)
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Multidisciplinary Sciences
Lei Wang et al.
Summary: Researchers have proposed a method to construct MA(2)Z(4) monolayers with a septuple-atomic-layer structure, predicting 72 compounds that are thermodynamically and dynamically stable with diverse electronic properties. Among the predicted compounds, some exhibit topological nontriviality, ferromagnetic semiconductor behavior, Ising superconductivity, or unique spin-valley properties, providing a promising avenue for further experimental exploration.
NATURE COMMUNICATIONS
(2021)
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Qianqian Wang et al.
Summary: MoSi2N4 and WSi2N4 monolayers show suppressed Fermi level pinning and tunable Schottky barrier height, with exceptional SBH slope parameter and efficient Ohmic contacts, making them promising for high-performance and energy-efficient 2D semiconductor devices.
NPJ 2D MATERIALS AND APPLICATIONS
(2021)
Review
Chemistry, Multidisciplinary
Yue Zheng et al.
Summary: This article summarizes recent progress and developments in contact engineering of 2D materials for the realization of ohmic contacts in 2D electronic devices. The basic physics of contacts for both Si and 2D materials is briefly introduced, followed by various engineering strategies including band matching, doping, phase engineering, insertion of buffer layers, 2D/metal van der Waals contacts, and edge contacts. Opportunities and challenges for optimizing contacts for future 2D electronics are discussed.
CELL REPORTS PHYSICAL SCIENCE
(2021)
Article
Materials Science, Multidisciplinary
Chuong Nguyen
Summary: Graphene-based van der Waals heterostructures, like graphene/BiI3, exhibit weak van der Waals interactions and form n-type Schottky contacts with adjustable barriers through factors such as interlayer coupling and electric gating. These characteristics make them a promising building block for high-performance photoresponsive optoelectronic devices.
Review
Materials Science, Multidisciplinary
Yee Sin Ang et al.
Summary: Electrically contacting two-dimensional materials is crucial for studying fundamental charge transport physics and designing high-performance devices. Recent developments in theory and computational simulation of charge injection and electrical contact formation in 2D materials are summarized, focusing on the importance of these processes for the performance and functionality of devices.
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