Design and numerical analysis of a novel argon gas tube to reduce impurities in large size casting crystalline silicon furnace

Article Chemistry, Physical

Design and Numerical Optimization of Gas Guidance System in Casting Silicon Furnace by the Orthogonal Experiment

Wenjia Su et al.

Summary: 3D global simulations were used to investigate gas flow and impurities transport in a casting silicon furnace with a unique designed spray-type gas guidance system (GGS). The simulation results showed that the GGS effectively inhibited the backflow area above the melt free surface and decreased the average concentration of CO by 31%. The GGS was optimized by an orthogonal experiment and had the most obvious effect on removing impurities when Q = 40 L/min, H = 50 mm, and L = 50 mm.

SILICON (2022)

Add to Collection

Article Crystallography

Design and Numerical Study of Argon Gas Diversion System Using Orthogonal Experiment to Reduce Impurities in Large-Sized Casting Silicon

Jiulong Li et al.

Summary: An argon gas diversion system is proposed to reduce oxygen and carbon impurities during silicon casting. Numerical simulations were conducted to investigate the effects of different parameters on impurity reduction. The results showed that the system effectively suppressed backflow, reduced CO generation, and decreased impurity penetration into the silicon melt. The optimal parameter combination was determined through orthogonal experiments.

CRYSTALS (2022)

Add to Collection

Article Chemistry, Physical

Reduction of Carbon and Oxygen Impurities in mc-Silicon Ingot Using Molybdenum Gas Shield in Directional Solidification Process

M. Avinash Kumar et al.

Summary: Transient global heat transfer simulations were conducted to analyze the impact of a molybdenum shield on the formation of carbon and oxygen impurities in mc-silicon grown by Directional Solidification process. The molybdenum shield effectively reduces the incorporation of carbon and oxygen impurities, thereby enhancing the quality of the ingot. This study demonstrates that the molybdenum shield significantly improves the uniformity and reduces the distribution of carbon and oxygen impurities in the grown mc-silicon ingot.

SILICON (2021)

Add to Collection

Article Crystallography

Effect of Argon Flow on Oxygen and Carbon Coupled Transport in an Industrial Directional Solidification Furnace for Crystalline Silicon Ingots

Xiaofang Qi et al.

Summary: The study investigates the effect of argon flow rate on oxygen and carbon coupled transport in an industrial directional solidification furnace, showing that increasing argon flow rate leads to a decrease in oxygen concentration and carbon content in the grown ingot. The coupling transport of carbon and oxygen is related to the flow intensity of argon gas.

CRYSTALS (2021)

Add to Collection

Article Crystallography