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Summary: This study reports an excellent broad-spectrum UV photodetector with a high detectivity. The device is based on a p-beta Ga2O3/n-GaN heterojunction and exhibits a continuous conduction band without a potential energy barrier, enabling efficient electron transport. The photodetector shows a high photoresponsivity and detectivity for different wavelengths ranging from 255 nm to 360 nm.
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Qingyi Zhang et al.
Summary: By lattice and band engineering, Zhang et al. constructed a unipolar barrier avalanche photodiode with suppressed dark current and reinforced reverse breakdown. Ga2O3-based solar blind avalanche photodetectors exhibit low voltage operation, optical filter-free and monolithic integration of photodetector arrays, and therefore they are promising to be an alternative to the bulky and fragile photomultiplier tubes for weak signal detection in deep-ultraviolet region. These findings provide insights into precise manipulation of band alignment in avalanche photodetectors, and also offer exciting opportunities for further developing high-performance Ga2O3-based electronics and optoelectronics.
NATURE COMMUNICATIONS
(2023)
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Xiaolei Deng et al.
Summary: In this study, a woven optoelectronic keyboard consisting of four individual fibrous photodetectors was integrated to achieve higher level of integration. Each photodetector is based on a uniform type-II TiO2/Cs3Cu2I5 heterojunction, providing improved optoelectronic performance. The woven keyboard can perform logic AND/OR operations and identify UV light signals as keyboard input signals.
ADVANCED FUNCTIONAL MATERIALS
(2023)
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Shan Li et al.
Summary: This study reported an ultraviolet photodetector constructed on a simple vertical PEDOT:PSS/SiC hybrid heterojunction, which demonstrated superior self-powered performance. The SiC based photodetector achieved self-powered responsivity over A/W level, comparable with many reported 4H-SiC avalanche photodiodes, due to the abundant charge carrier concentration in 4H-SiC substrate and the large built-in field at PEDOT:PSS/SiC heterointerface. The fabricated PD showed high responsivity, detectivity, and external quantum efficiency, fast rise/decay time, large on-off switching ratio, high spectral rejection ratio, and long lifetime reliability.
APPLIED PHYSICS LETTERS
(2023)
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Huaile He et al.
Summary: Previous research has shown that hybridization of N 2p and O 2p orbitals effectively reduces the electrical activity of oxygen vacancies in oxide semiconductors. However, achieving N-alloyed Ga2O3 films, known as GaON, is challenging due to nitrogen's limited solubility in the material. This study explores a new method using plasma-enhanced chemical vapor deposition with high-energy nitrogen plasma to enhance nitrogen solubility. By adjusting the N-2 and O-2 carrier gas ratio, the thin film's bandgap can be tuned, resulting in a decrease in oxygen vacancy density and improved performance of GaON-based photodetectors.
JOURNAL OF PHYSICAL CHEMISTRY LETTERS
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Li Shan et al.
Summary: The modulation effect of oxygen vacancy (V-O) on photodetection performance can be inherited from a single epsilon-Ga2O3 layer to its heterojunction structure, providing the possibility for constructing regulable self-powered photodetectors. Control of V-O defects concentration in the epsilon-Ga2O3 layer leads to enhanced photodetection properties, showcasing high photo-to-dark current ratio, excellent on/off switching ratio, fast rise/decay time, large responsivity, superior detectivity, outstanding external quantum efficiency, and high rejection ratio in the PGO-O-2 photodetector.
SCIENCE CHINA-TECHNOLOGICAL SCIENCES
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Fei Chen et al.
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Di Wu et al.
Summary: A highly polarization-sensitive PdSe2/GaN Schottky junction is developed for UV photodetection. The device exhibits a large responsivity, high specific detectivity, and fast response speed. The device is highly sensitive to polarized UV light due to the puckered structure of the PdSe2 layer, with a large dichroic ratio.
Article
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Sheng Chen et al.
Summary: In this study, self-powered photodetectors based on the m-GeS2/GaN heterojunction are proposed, and their electronic and optical properties are investigated. The photodetectors exhibit self-powered response, high responsivity and detectivity, and ultrafast response time, demonstrating enormous potential.
APPLIED PHYSICS LETTERS
(2022)
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Summary: This article introduces a self-powered photodetector based on Ga2O3/V2O5 materials, which exhibits high solar-blind spectral discrimination ability and excellent photodetection performance.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
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Shan Li et al.
Summary: In this study, self-powered ultraviolet photodetectors were constructed using VOx films as hole transport layer (HTL) on VOx/Ga2O3 heterojunctions. By manipulating the conductivity of the HTL through annealing, controllable photodetection performance was achieved. The modulated VGO PDs showed enhanced photodetection performance and fast response time.
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Summary: In this paper, self-powered ultraviolet photodetectors based on Ga2O3/p-GaN structures were fabricated and studied. The effects of different crystal phases of Ga2O3 on the performance of the photodetectors were investigated, and the responsivity was improved by introducing an in situ GaON dielectric layer. The resulting photodetectors showed low dark current, high responsivity, and detectivity, making them suitable for various photonic systems and applications without an external power supply.
ACS APPLIED MATERIALS & INTERFACES
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Summary: Ga2O3 with ultra-wide bandgap and high breakdown field strength has great potential in power electronics and UV opto-electronics. This study investigates the radiation hardness of e-Ga2O3 thin films under low-energy proton irradiation, and finds that the material maintains its structural and optical properties while exhibiting mild degradation in photodetector performance. This reveals the excellent radiation resistance of e-Ga2O3 and its potential for extreme environment optoelectronics.
MATERIALS & DESIGN
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Summary: This review summarizes the recent research progress on self-powered solar-blind photodetectors based on Ga2O3. The detectors are classified into different types, and the fundamental properties of Ga2O3, the basic working principles of self-powered photodetectors, and the device processing developments are summarized. Finally, conclusions regarding recent advances, remaining challenges, and prospects are presented and discussed.
MATERIALS TODAY PHYSICS
(2022)
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Lipeng Deng et al.
Summary: In this study, plasma treatment technology was used to modify the surface structure of Ga2O3 material, reducing the generation of oxygen vacancies. A photodetector was constructed and the results showed that plasma treatment could improve the photocurrent and photoresponse speed of the detector. This study demonstrates that plasma treatment is an effective method for treating oxygen vacancies and obtaining high-performance photodetectors.
APPLIED SURFACE SCIENCE
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Summary: The study reports on flexible ultrathin MAPbBr(3)-based UV photodetectors with fast response and high sensitivity. The devices exhibit excellent mechanical flexibility and reliability after repeated bending cycles. Experimental results demonstrate the potential of ultrathin perovskite nanosheets in UV communication and related applications.
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Shan Li et al.
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JOURNAL OF PHYSICAL CHEMISTRY LETTERS
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Mohit Kumar et al.
Summary: A self-powered ultraviolet photodetector based on titanium dioxide with high detectivity and good photoresponsivity has been developed, showing an enhancement compared to traditional direct current photovoltaic effect. The device demonstrated high on/off ratio, ultrafast rise/decay time and noise equivalent power, offering potential for downsizing and practical applications. The results pave the way for designing energy-efficient ultrafast photodetectors for optical communication and other advanced optoelectronic applications.
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Weidong Song et al.
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Yi Liang et al.
Summary: The synthesis of large-area two-dimensional PdTe2 multilayer for visible-blind deep-ultraviolet photodetection was presented. The heterostructure displayed distinct photo-voltaic behavior and high response parameters, serving as a self-driven photodetector. The photodetector could also function as a DUV light image sensor with reliable recording capabilities.
IEEE ELECTRON DEVICE LETTERS
(2021)
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Malkeshkumar Patel et al.
Summary: This work presents large-area transparent photovoltaic devices (TPVD) that can be easily prepared at room temperature from eco-friendly and abundant materials, and exhibit high transparency and photovoltaic performance. Surface plasmons in the AgNW electrode enhance the transparency and photovoltaic performance of the TPVD.
ADVANCED ELECTRONIC MATERIALS
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Shan Li et al.
Summary: Self-powered ultraviolet photodetectors based on beta-Ga2O3/WO3 nanoparticles exhibit excellent photodetection properties with low noise, high photo-to-dark current ratio, and outstanding spectral selectivity, paving the way for next-generation nanodevices.
IEEE SENSORS JOURNAL
(2021)
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Shan Li et al.
Summary: By introducing a post-annealing method, the performance of ε-Ga2O3 photodetectors was improved by enhancing film quality and modulating V-O defect concentration. Through regulating V-O concentration, crucial parameters of the devices were significantly improved, leading to higher performance in terms of photo-to-dark current ratio and responsivity.
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