High dielectric temperature stability in the relaxor ferroelectric thin films via using a multilayer heterostructure

The temperature stability of the relaxor ferroelectrics (RFEs) mainly originates from the diffuse phase transition (DPT). Higher atomic disorder degrees, more inhomogeneous lattice distortion and polymorphic phases could increase the compositional inhomogeneity for a stronger DPT. This work aims to enhance this compositional inhomogeneity for a high dielectric temperature stability by preparing the multicomponent RFE-based multilayer heterostructure polycrystalline thin films. The as-prepared RFE thin films show a relatively high dielectric constant (-165.14), and a very high dielectric temperature stability with a very low relative variation ratio of dielectric constant (-1.7 %) from-55 degrees C to 150 degrees C which can be comparable to most linear dielectric thin films. Meanwhile, the dielectric loss and leakage current densities were also optimized. This work brings the potential application of the RFE thin films in the thin-film capacitor with high temperature stability requirements.

Automated summary

This study enhances the compositional inhomogeneity of relaxor ferroelectric thin films to improve their dielectric temperature stability. The prepared films exhibit a relatively high dielectric constant and a very low variation ratio of dielectric constant over a wide temperature range.