Related references
Note: Only part of the references are listed.Origin of the Diffusion-Related Optical Degradation of 1.3 μm Inas QD-LDs Epitaxially Grown on Silicon Substrate
Matteo Buffolo et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2022)
Theoretical analysis and modelling of degradation for III-V lasers on Si
Jianzhuo Liu et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2022)
Impact of a defect trapping layer on the reliability of 1.3 μm quantum dot laser diodes grown on silicon
M. Zenari et al.
MICROELECTRONICS RELIABILITY (2022)
Electrically pumped quantum-dot lasers grown on 300 mm patterned Si photonic wafers
Chen Shang et al.
LIGHT-SCIENCE & APPLICATIONS (2022)
Reduced dislocation growth leads to long lifetime InAs quantum dot lasers on silicon at high temperatures
Jennifer Selvidge et al.
APPLIED PHYSICS LETTERS (2021)
Identification of dislocation-related and point-defects in III-As layers for silicon photonics applications
Michele Zenari et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2021)
Investigation of Current-Driven Degradation of 1.3 μm Quantum-Dot Lasers Epitaxially Grown on Silicon
Matteo Buffolo et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2020)
Origin of Defect Tolerance in InAs/GaAs Quantum Dot Lasers Grown on Silicon
Zizhuo Liu et al.
JOURNAL OF LIGHTWAVE TECHNOLOGY (2020)
Impact of carrier transport on he performance of QD lasers on silicon: a drift-diffusion approach
Marco Saldutti et al.
PHOTONICS RESEARCH (2020)
Optical Noise of Dual-State Lasing Quantum Dot Lasers
Yueguang Zhou et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2020)
Physical Origin of the Optical Degradation of InAs Quantum Dot Lasers
Matteo Buffolo et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2019)
Non-radiative recombination at dislocations in InAs quantum dots grown on silicon
Jennifer Selvidge et al.
APPLIED PHYSICS LETTERS (2019)
Degradation of III-V Quantum Dot Lasers Grown Directly on Silicon Substrates
Samuel Shutts et al.
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2019)
The Importance of p-Doping for Quantum Dot Laser on Silicon Performance
Justin C. Norman et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2019)
Highly Reliable Low-Threshold InAs Quantum Dot Lasers on On-Axis (001) Si with 87% Injection Efficiency
Daehwan Jung et al.
ACS PHOTONICS (2018)
Impact of threading dislocation density on the lifetime of InAs quantum dot lasers on Si
Daehwan Jung et al.
APPLIED PHYSICS LETTERS (2018)
Silicon Photonics Circuit Design: Methods, Tools and Challenges
Wim Bogaerts et al.
LASER & PHOTONICS REVIEWS (2018)
Monolithic silicon-photonic platforms in state-of-the-art CMOS SOI processes [Invited]
Vladimir Stojanovic et al.
OPTICS EXPRESS (2018)
Quantum Efficiency of Quantum Dot Lasers
Peter Blood
IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS (2017)
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Sergii Golovynskyi et al.
NANOSCALE RESEARCH LETTERS (2017)
Comparative Study of Photoelectric Properties of Metamorphic InAs/InGaAs and InAs/GaAs Quantum Dot Structures
Sergii Golovynskyi et al.
NANOSCALE RESEARCH LETTERS (2017)
High efficiency low threshold current 1.3 μm InAs quantum dot lasers on on-axis (001) GaP/Si
Daehwan Jung et al.
APPLIED PHYSICS LETTERS (2017)
Analytical approach to the multi-state lasing phenomenon in quantum dot lasers
V. V. Korenev et al.
APPLIED PHYSICS LETTERS (2013)
InGaN/GaN Quantum Dot Red (λ=630 nm) Laser
Thomas Frost et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2013)
Analysis of Diffusion-Related Gradual Degradation of InGaN-Based Laser Diodes
Kenji Orita et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2012)
A InGaN/GaN quantum dot green (λ=524 nm) laser
Meng Zhang et al.
APPLIED PHYSICS LETTERS (2011)
Simple form of multimode laser diode rate equations incorporating the band filling effect
Kenji Wada et al.
OPTICS EXPRESS (2011)
Structural analysis of life tested 1.3 mu m quantum dot
R. Beanland et al.
JOURNAL OF APPLIED PHYSICS (2008)
Differential gain and gain compression in quantum-dot lasers
Andrea Fiore et al.
IEEE JOURNAL OF QUANTUM ELECTRONICS (2007)
Optical gain and co-stimulated emissions of photons and phonons in indirect bandgap semiconductors
M. J. Chen et al.
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS (2006)
Coexistence of deep levels with optically active InAs quantum dots
SW Lin et al.
PHYSICAL REVIEW B (2005)
Carrier capture and relaxation in InAs quantum dots
KW Sun et al.
NANOTECHNOLOGY (2005)
Temperature dependence of the effective coefficient of Auger recombination in 1.3 mu m InAs/GaAs QD lasers
II Novikov et al.
SEMICONDUCTORS (2005)
Optical gain in materials with indirect transitions
T Trupke et al.
JOURNAL OF APPLIED PHYSICS (2003)
Temperature-dependent measurement of Auger recombination in self-organized In0.4Ga0.6As/GaAs quantum dots
S Ghosh et al.
APPLIED PHYSICS LETTERS (2001)
Full-band-structure calculation of Shockley-Read-Hall recombination rates in InAs
S Krishnamurthy et al.
JOURNAL OF APPLIED PHYSICS (2001)