High-Power High-Speed MUTC Waveguide Photodiodes Integrated on Si3N4/Si Platform Using Micro-Transfer Printing

We demonstrate modified uni-traveling carrier (MUTC) waveguide photodiodes on a silicon nitride/silicon (Si3N4/Si) photonic platform using micro-transfer printing. The photodiodes exhibit high bandwidth of 54 GHz and low dark current of 30 nA at -3 V. The MUTC photodiode (PD) with short InGaAsP waveguide is directly (butt-) coupled to the Si3N4 waveguide and was designed to facilitate efficient light coupling while preserving the favorable high-power capability of InGaAsP/InP evanescently-coupled waveguide PDs. A responsivity of 0.42 A/W at 1310 nm wavelength and an output power as high as +7 dBm at 50 GHz and 22 mA photocurrent were measured.

Automated summary

We demonstrate modified uni-traveling carrier (MUTC) waveguide photodiodes on a silicon nitride/silicon (Si3N4/Si) photonic platform using micro-transfer printing. The photodiodes exhibit a high bandwidth of 54 GHz and a low dark current of 30 nA at -3 V. The MUTC photodiode with a short InGaAsP waveguide is directly coupled to the Si3N4 waveguide and designed for efficient light coupling and high-power capability.