Related references
Note: Only part of the references are listed.Investigation on electrical characteristics of TFTs fabricated with germanium films crystallized by atmospheric-pressure micro thermal plasma jet irradiation
Takuma Sato et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2022)
Solid-Phase Crystallization of GeSn Thin Films on GeO2-Coated Glass
Takuto Mizoguchi et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2022)
Acceptor defects in polycrystalline Ge layers evaluated using linear regression analysis
Toshifumi Imajo et al.
SCIENTIFIC REPORTS (2022)
Record-High Hole Mobility Germanium on Flexible Plastic with Controlled Interfacial Reaction
Toshifumi Imajo et al.
ACS APPLIED ELECTRONIC MATERIALS (2022)
Sn Concentration Effects on Polycrystalline GeSn Thin Film Transistors
Kenta Moto et al.
IEEE ELECTRON DEVICE LETTERS (2021)
Self-organized ⟨100⟩ direction growth of germanium film on insulator obtained by high speed continuous wave laser annealing
Ryo Matsumura et al.
MATERIALS LETTERS (2021)
Strain effects on polycrystalline germanium thin films
Toshifumi Imajo et al.
SCIENTIFIC REPORTS (2021)
Temperature dependence of strain-phonon coefficient in epitaxial Ge/Si(001): A comprehensive analysis
C. L. Manganelli et al.
JOURNAL OF RAMAN SPECTROSCOPY (2020)
Metal-induced layer exchange of group IV materials
Kaoru Toko et al.
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2020)
Layer-exchange crystallization for low-temperature (∼450°C) formation of n-type tensile-strained Ge on insulator
Hongmiao Gao et al.
APPLIED PHYSICS LETTERS (2020)
Sb-doped crystallization of densified precursor for n-type polycrystalline Ge on an insulator with high carrier mobility
D. Takahara et al.
APPLIED PHYSICS LETTERS (2019)
High-performance n-channel polycrystalline germanium thin-film transistors via continuous-wave laser crystallization and green nanosecond laser annealing for source and drain dopant activation
Yi-Shao Li et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2019)
Crystallization of Amorphous Germanium Films and Multilayer a-Ge/a-Si Structures upon Exposure to Nanosecond Laser Radiation
V. A. Volodin et al.
SEMICONDUCTORS (2019)
Polycrystalline thin-film transistors fabricated on high-mobility solid-phase-crystallized Ge on glass
K. Moto et al.
APPLIED PHYSICS LETTERS (2019)
Diffusion and Dopant Activation in Germanium: Insights from Recent Experimental and Theoretical Results
E. N. Sgourou et al.
APPLIED SCIENCES-BASEL (2019)
Poly-GeSn Junctionless Thin-Film Transistors on Insulators Fabricated at Low Temperatures via Pulsed Laser Annealing
Lu Zhang et al.
PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS (2019)
High-electron-mobility (370 cm2/Vs) polycrystalline Ge on an insulator formed by As-doped solid-phase crystallization
M. Saito et al.
SCIENTIFIC REPORTS (2019)
Germanium CMOS potential from material and process perspectives: Be more positive about germanium
Akira Toriumi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Dopant behavior in heavily doped polycrystalline Ge1-xSnx layers prepared with pulsed laser annealing in water
Kouta Takahashi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2018)
Fabrication of high-hole-mobility germanium-on-insulator wafers through an easy method
Kai Yu et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2018)
Improving carrier mobility of polycrystalline Ge by Sn doping
Kenta Moto et al.
SCIENTIFIC REPORTS (2018)
High-hole mobility polycrystalline Ge on an insulator formed by controlling precursor atomic density for solid-phase crystallization
Kaoru Toko et al.
SCIENTIFIC REPORTS (2017)
Low-temperature (330 °C) crystallization and dopant activation of Ge thin films via AgSb-induced layer exchange: Operation of an n-channel polycrystalline Ge thin-film transistor
Tatsuya Suzuki et al.
APPLIED PHYSICS EXPRESS (2017)
Impacts of plasma-induced damage due to UV light irradiation during etching on Ge fin fabrication and device performance of Ge fin field-effect transistors
Wataru Mizubayashi et al.
APPLIED PHYSICS EXPRESS (2017)
High carrier mobility of Sn-doped polycrystalline-Ge films on insulators by thickness-dependent low-temperature solid-phase crystallization
Taizoh Sadoh et al.
APPLIED PHYSICS LETTERS (2016)
High-Performance Flexible Thin-Film Transistors Based on Single-Crystal-Like Germanium on Glass
Mojtaba Asadirad et al.
ADVANCED ELECTRONIC MATERIALS (2016)
Electrical properties of pseudo-single-crystalline germanium thin-film-transistors fabricated on glass substrates
K. Kasahara et al.
APPLIED PHYSICS LETTERS (2015)
III-V/Ge channel MOS device technologies in nano CMOS era
Shinichi Takagi et al.
JAPANESE JOURNAL OF APPLIED PHYSICS (2015)
Observation and Origin of Extraordinary Atomic Mobility at Metal-Semiconductor Interfaces at Low Temperatures
Zumin Wang et al.
PHYSICAL REVIEW LETTERS (2015)
Operation of inverter and ring oscillator of ultrathin-body poly-Ge CMOS
Yoshiki Kamata et al.
APPLIED PHYSICS EXPRESS (2014)
High-performance poly-Ge short-channel metal-oxide-semiconductor field-effect transistors formed on SiO2 layer by flash lamp annealing
Koji Usuda et al.
APPLIED PHYSICS EXPRESS (2014)
Mobility characterization of Ge-on-insulator metal-oxide-semiconductor field-effect transistors with striped Ge channels fabricated by lateral liquid-phase epitaxy
Takuji Hosoi et al.
APPLIED PHYSICS LETTERS (2014)
Low-temperature (180°C) formation of large-grained Ge (111) thin film on insulator using accelerated metal-induced crystallization
K. Toko et al.
APPLIED PHYSICS LETTERS (2014)
Applying an improved phonon confinement model to the analysis of Raman spectra of germanium nanocrystals
V. A. Volodin et al.
JOURNAL OF EXPERIMENTAL AND THEORETICAL PHYSICS (2014)
Dramatic enhancement of low electric-field hole mobility in metal source/drain Ge p-channel metal-oxide-semiconductor field-effect transistors by introduction of Al and Hf into SiO2/GeO2 gate stack
Keisuke Yamamoto et al.
APPLIED PHYSICS LETTERS (2013)
Electrical properties of phosphorus-doped polycrystalline germanium formed by solid-phase and metal-induced crystallization
Hyun-Wook Jung et al.
JOURNAL OF ALLOYS AND COMPOUNDS (2013)
Chip-size formation of high-mobility Ge strips on SiN films by cooling rate controlled rapid-melting growth
Kaoru Toko et al.
APPLIED PHYSICS LETTERS (2011)
Formation of heavily boron-doped hydrogenated polycrystalline germanium thin films by co-sputtering for developing p+ emitters of bottom cells
Chao-Yang Tsao et al.
SOLAR ENERGY MATERIALS AND SOLAR CELLS (2011)
Low-Temperature, Low-Pressure Chemical Vapor Deposition and Solid Phase Crystallization of Silicon-Germanium Films
Munehiro Tada et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2009)
Single-crystal germanium layers grown on silicon by nanowire seeding
Shu Hu et al.
NATURE NANOTECHNOLOGY (2009)
Electrical properties of poly-Ge on glass substrate grown by two-step solid-phase crystallization
Kaoru Toko et al.
SOLID-STATE ELECTRONICS (2009)
Superlateral growth of a-Ge film by excimer laser annealing
Wenchang Yeh et al.
APPLIED PHYSICS LETTERS (2008)
High-performance gate-all-around GeOI p-MOSFETs fabricated by rapid melt growth using plasma nitridation and ALD Al2O3 gate dielectric and self-aligned NiGe contacts
Jia Feng et al.
IEEE ELECTRON DEVICE LETTERS (2008)
Diffusion and activation of n-type dopants in germanium
Masahiro Koike et al.
JOURNAL OF APPLIED PHYSICS (2008)
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
D. P. Brunco et al.
JOURNAL OF THE ELECTROCHEMICAL SOCIETY (2008)
Crystallization of amorphous Ge films induced by semiconductor diode laser annealing
K. Sakaike et al.
THIN SOLID FILMS (2008)
Influence of alloy composition on carrier transport and solar cell properties of hydrogenated microcrystalline silicon-germanium thin films
Takuya Matsui et al.
APPLIED PHYSICS LETTERS (2006)
Fabrication of high-quality p-MOSFET in Ge grown heteroepitaxially on Si
A Nayfeh et al.
IEEE ELECTRON DEVICE LETTERS (2005)
Strained Si, SiGe, and Ge on-insulator: review of wafer bonding fabrication techniques
G Taraschi et al.
SOLID-STATE ELECTRONICS (2004)
Evaluation of grain boundary trap states in polycrystalline-silicon thin-film transistors by mobility and capacitance measurements
H Ikeda
JOURNAL OF APPLIED PHYSICS (2002)
Absolute surface energies of group-IV semiconductors:: Dependence on orientation and reconstruction -: art. no. 115318
AA Stekolnikov et al.
PHYSICAL REVIEW B (2002)
Share Paper
