Electrolyte-Gated Perovskite Transistors Functionalized with Conjugated Polymers

In emerging perovskite transistors, interfacial engineering is pivotal for modulating the effective charge carrier transport; however, the gate dielectric layer and its interface remain unexplored owing to the limited chemical stability of perovskites. Here, we propose an interfacial functionalization with a conjugated polymer to allow the use of a high capacitance electrolyte dielectric in top-gate perovskite transistors. This multifunctional approach, exploiting orthogonal solution-processed polymers, enables blocking of chemical diffusion during the deposition of the dielectric, allows passivation of defects on the perovskite surface, results in air stability enhancement, and boosts mobility via the formation perovskite-polymer hybrid channels. The optimized conjugated polymer-capped lead iodide perovskite transistors showed a remarkable hole mobility of over 30 cm2 V-1 s-1 at <= 2 V. This result demonstrated the possibility of realizing high mobility through interfacial functionalization of perovskites in transistor applications.

Automated summary

In order to overcome the limited chemical stability of perovskite compounds, we propose an interfacial functionalization method using a conjugated polymer in top-gate perovskite transistors with a high capacitance electrolyte dielectric. This multifunctional approach, utilizing separately processed polymers, prevents chemical diffusion during dielectric deposition, repairs defects on the perovskite surface, enhances air stability, and improves mobility through the formation of perovskite-polymer hybrid channels. The optimized conjugated polymer-capped lead iodide perovskite transistors demonstrate a remarkable hole mobility of over 30 cm2 V-1 s-1. This result demonstrates the potential of achieving high mobility in perovskite transistor applications through interfacial functionalization.