Preparation and characterization of SbAs nanorods for opto-electronics applications

Polycrystalline SbAs nanorods were synthesized by the simple solvothermal method. X-ray diffraction analysis of prepared SbAs confirmed the formation of rhombohedral structure and the average crystallite size of similar to 9 nm. Nanorods shaped morphology of SbAs polycrystalline was studied using high-resolution scanning electron microscopy analysis. The optical bandgap energy of 3.58 eV was determined from UV-visible spectrum with absorption maximum at 226 nm. An uncommon and fascinating potential-induced semiconductor to insulator-like transition is determined within the frequency-dependent real and imaginary part of impedance, dielectric plot and modulus plot. The direct bandgap of prepared SbAs nanorods made it applicable in opto-electronic devices.

Automated summary

Polycrystalline SbAs nanorods were synthesized by a solvothermal method. X-ray diffraction confirmed the formation of rhombohedral structure and an average crystallite size of around 9 nm. The nanorods showed a bandgap energy of 3.58 eV and a potential-induced semiconductor to insulator-like transition.