Dual Resistive Switching Performance Derived from Ionic Migration in Halide Perovskite Based Memory

Herein, we report an environmentally stable and friendly halide perovskite based resistive random access memory device with an Ag/PMMA/(PMA)(2)CuBr4/FTO (PMMA = poly( methyl methacrylate); PMA = C6H5CH2NH3) architecture. The device exhibits the coexistence of two bipolar resistive switching modes, including counterclockwise and clockwise switching characteristics. The devices with both switching modes show stable endurance (>100 cycles) and long retention performance (>10(4) s). By applying a suitable electrical stimulation, the counterclockwise and clockwise switching behaviors are interconvertible. Furthermore, the Au/PMMA/(PMA)(2)CuBr4/FTO and Ag/ (PMA)(2)CuBr4/FTO devices were fabricated to verify the origin of dual resistive switching behaviors. The similar dual resistive switching behaviors after electroforming processes of three types of memory devices suggest that the interconvertible dual resistive switching characteristics could be attributed to the ionic migration in the (PMA)(2)CuBr4 perovskite layer.

Automated summary

In this paper, we present an environmentally stable and friendly resistive random access memory device based on halide perovskite. The device exhibits two bipolar resistive switching modes and shows stable endurance and long retention performance. The counterclockwise and clockwise switching behaviors can be interconverted by applying suitable electrical stimulation. The origin of the dual resistive switching behaviors is verified through the fabrication of different memory devices.