Strong interlayer transition in a staggered gap GeSe/MoTe2 heterojunction diode for highly efficient visible and near-infrared photodetection and logic inverter

Transition-metal dichalcogenides exhibit strong light-matter interactions and unique multifunctional logic behavior. Here, the strong interlayer transition and excellent broadband photodetection of GeSe/MoTe2 van der Waals (vdW) heterojunction are demonstrated. Differential charge density and photoluminescence quenching analyses reveal a strong interlayer transition between GeSe and MoTe2. In addition, density functional theory analysis predicts the formation of staggered band alignment, which contributed to the spatial segregation of photogenerated electron-hole pairs. The diode exhibited excellent optoelectronic characteristics in the visible and near-infrared region. A high responsivity of similar to 1.0 x 10(4) A/W, an excellent detectivity of similar to 8.4 x 10(12) jones, and a fast rise and fall time of 458 and 498 mu s, respectively. Finally, a two-dimensional complementary inverter consisting of p-channel GeSe and n-channel MoTe2 is examined to analyze its application for a logic inverter. The findings of this study will play a crucial role in the stimulation and fabrication of multifunctional vdW heterostructure devices.

Automated summary

This study demonstrates the strong interlayer transition and excellent broadband photodetection of the GeSe/MoTe2 van der Waals (vdW) heterojunction. The spatial segregation of photogenerated electron-hole pairs is enabled by the formation of staggered band alignment. The heterojunction exhibits outstanding optoelectronic characteristics and can be used as a logic inverter. The findings of this study will be crucial for the development of multifunctional vdW heterostructure devices.