First Demonstration of Four-Finger N-polar GaN HEMT Exhibiting Record 712-mW Output Power With 31.7% PAE at 94 GHz

Article Engineering, Electrical & Electronic

6.2 W/Mm and Record 33.8 PAE at 94 GHz From N-Polar GaN Deep Recess MIS-HEMTs With ALD Ru Gates

Wenjian Liu et al.

Summary: This study reports on the W-band power performance of N-polar GaN deep recess MIS-HEMTs using a new ALD ruthenium gate metallization process. The use of deep recess structure helps control DC-RF dispersion and increase conductivity in the access regions, while ALD ruthenium effectively fills narrow T-gate stems to achieve shorter gate lengths and lower gate resistance. With a gate length scaled down to 48 nm, a record high 8.1 dB linear transducer gain was achieved at 94 GHz, resulting in a record 33.8% power-added efficiency and output power density of 6.2 W/mm.

IEEE MICROWAVE AND WIRELESS COMPONENTS LETTERS (2021)

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Proceedings Paper Engineering, Electrical & Electronic

Commercially Available N-polar GaN HEMT Epitaxy for RF Applications

Davide Bisi et al.

Summary: Transphorm Inc. supplies N-polar GaN epitaxial wafers for ultra-high-performance RF and mm-wave electronics on sapphire and silicon carbide (SiC) substrates. The manufacturing facility, epitaxial growth on both 100-mm sapphire and 100-mm SiC, and device electrical performance are reported in this work. Results show good material quality, low 2DEG sheet resistance with good non-uniformity, and good dynamic behavior with no current dispersion at both room temperature and high temperature (150 degrees C).

2021 IEEE 8TH WORKSHOP ON WIDE BANDGAP POWER DEVICES AND APPLICATIONS (WIPDA) (2021)

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Review Engineering, Electrical & Electronic