4.6 Article

Scaling with MgO thickness of the proximity exchange field in a Fe/MgO/Si contact

Journal

PHYSICAL REVIEW B
Volume 107, Issue 2, Pages -

Publisher

AMER PHYSICAL SOC
DOI: 10.1103/PhysRevB.107.024411

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The scaling of the proximity exchange field at the Fe/MgO/Si interface of the Fe/MgO/Si tunnel contacts was studied using the inverted Hanle effect. The exchange field was found to vary with bias in the same way as the square of the tunnel spin polarization (TSP). The weak and nonexponential decay of the exchange field with increasing MgO thickness tMgO suggests the dominance of two-step tunneling processes in the exchange interaction.
The scaling of the proximity exchange field, which ferromagnetic Fe exerts on the spin accumulation at the MgO/Si interface of Fe/MgO/Si tunnel contacts, was investigated using the inverted Hanle effect. Data as a function of the applied bias voltage shows that the exchange field varies with bias in the same way as the square of the tunnel spin polarization (TSP). The decay of the exchange field with increasing MgO thickness tMgO is rather weak and nonexponential, which we argue to be related to the improved epitaxial quality of the MgO, and the, consequently, improved spin-filtering properties at larger MgO thickness. Using the TSP data to correct for this yields an exponential decay of the exchange field with tMgO with a decay length of lambda = -0.42 nm. Comparing this to the decay length for the tunnel conductance (lambda = -0.21 nm) suggests that the exchange interaction is dominated by two-step tunneling processes.

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