Related references
Note: Only part of the references are listed.
Article
Chemistry, Multidisciplinary
Zheng-Dong Luo et al.
Summary: This study explores the use of dual-gate two-dimensional ferroelectric field-effect transistors (2D FeFETs) as basic devices to address in-memory computing in both digital and analog spaces. Rich logic functionalities and key synaptic functions were achieved by diversifying the electrostatic behaviors in these transistors. A half-adder circuit was successfully constructed, and the potential for neuromorphic computing was demonstrated at the device and system levels.
Article
Chemistry, Multidisciplinary
Chunyu Du et al.
Summary: By utilizing a silver imidazole complex as the switching medium, limiting the migration range of silver ions, and reducing spatial and temporal variations, the RRAM exhibits enhanced performance with low operation voltage, making it suitable for building logic gates. The self-reduction and grain boundary confinement effect of switching materials may pave the way for large-scale circuit development in non-volatile computing and machine learning.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Physical
Tao Guo et al.
Summary: A versatile memristor with volatile/non-volatile bifunctional properties has been developed, enabling non-volatile memory, selectors, artificial neurons, and artificial synapses. This provides advantages in terms of circuit simplification and manufacturing costs.
NANOSCALE HORIZONS
(2022)
Article
Computer Science, Information Systems
Zhen Xu et al.
Summary: In a hardware-based neuromorphic computation system, using VO2 devices as artificial synapses and neurons has shown potential for mimicking biological neuron behavior, with VO2 devices demonstrating elastic relax behavior similar to that of neurons. Simulation results provide insight into the mechanisms underlying the volatile resistive transition in VO2 devices, offering a promising avenue for artificial neuron applications.
Article
Chemistry, Multidisciplinary
Peixian Lei et al.
Summary: The authors demonstrate a memristor based on 2D bismuth oxyiodide nanosheets that can exhibit bipolar resistive switching performance as well as electrical and light-induced synaptic plasticity. The fabricated memristor shows high-performance resistive switching behaviors with low power consumption and ultra-low SET voltage.
ADVANCED FUNCTIONAL MATERIALS
(2022)
Article
Chemistry, Multidisciplinary
Jiaxue Zhu et al.
Summary: This paper reports a compact multimode-fused spiking neuron that achieves human-like multisensory perception with excellent data compression and conversion capabilities. It supports multimodal tactile perception and has been validated for practical applications in tactile pattern recognition and object classification.
ADVANCED MATERIALS
(2022)
Article
Engineering, Electrical & Electronic
Pei Chen et al.
Summary: This study systematically investigates the effect of oxygen content on the performance of TS devices based on NbOx films. It is found that decreasing the oxygen content reduces the electroforming voltage and increases the forming yield. Additionally, inserting a high oxygen content NbOy layer improves the stability and uniformity of the devices.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2022)
Article
Chemistry, Physical
Wenjuan Ci et al.
Summary: Two-dimensional van der Waals magnetic materials exhibit unique properties compared to their bulk counterparts, such as mechanical flexibility, enhanced ferromagnetism at reduced layer thickness, and robust perpendicular magnetic anisotropy. This study focuses on vanaduim diselenide (VSe2) and investigates its thickness-dependent magnetism and strain modulation behavior. The researchers prepared VSe2 nanoflakes via chemical vapor deposition and found that the magnetic domain structures are present at room temperature in few-layer single VSe2 nanoflakes. The study also demonstrates that strain can effectively modulate the magnetic moment and coercive field of 2D VSe2 at room temperature.
Article
Chemistry, Physical
Yantao Yu et al.
Summary: The resistive switching behaviors of nitrogen-doped TiO2 nanorod arrays were investigated, and non-volatile and volatile switching were achieved below and above a relative lattice nitrogen content of 21%, respectively. The volatile devices exhibited spiking and decay features similar to the Leaky Integrate-and-Fire model, and the volatile behavior was attributed to the high defect concentration caused by nitrogen doping.
JOURNAL OF ALLOYS AND COMPOUNDS
(2022)
Article
Multidisciplinary Sciences
Rui Yuan et al.
Summary: This study presents a spike-based neuromorphic perception system with tunable and highly uniform artificial sensory neurons based on epitaxial VO2, capable of hand gesture classification. The system can encode multiple physical signals and address the variation issues of sensory neurons.
NATURE COMMUNICATIONS
(2022)
Article
Nanoscience & Nanotechnology
Xuelian Zhang et al.
Summary: This study investigates the resistive switching characteristics, synaptic functions, and neuromorphic computing of memristors based on two-dimensional MXene Ti3C2 nanosheets. The results show that both digital and analog resistive switching behaviors can coexist in these memristors depending on the magnitude of operation voltage. Additionally, the artificial synapses based on these memristors exhibit basic synaptic functions and successfully emulate the learning-forgetting experience. Moreover, the artificial synapses can be used to construct an artificial neural network for image recognition.
ACS APPLIED MATERIALS & INTERFACES
(2022)
Article
Physics, Applied
Ling Qin et al.
Summary: In this research, a memristor based on a single WO3 nanowire was constructed, demonstrating the coexistence of nonvolatile and volatile resistive switching behaviors. The device showed programmable memory capabilities through the tuning of operation voltage amplitude. This artificial synapse can emulate human learning and forgetting experiences and can be used for image recognition and selective memory.
APPLIED PHYSICS LETTERS
(2022)
Article
Materials Science, Multidisciplinary
Bingyang Xie et al.
Summary: In this study, the resistive switching behaviors in 2D BiOX nanosheets were systematically investigated, with BiOBr nanosheet demonstrating non-volatile bipolar RS behaviors and BiOBr0.7Cl0.3 nanosheet showing volatile threshold switching behaviors. These findings provide a new material foundation for research on novel memory devices and biomimetic synapses.
MATERIALS & DESIGN
(2022)
Article
Chemistry, Multidisciplinary
Xiong Wang et al.
Summary: This study reports a 2D ferromagnetic semiconductor material, 2H-phase vanadium diselenide (VSe2), showing enhanced magnetic ordering due to structural anisotropy at the 2D limit. This material only exhibits ferromagnetism in its 2D form, making it a promising candidate for miniature spintronics and information storage devices.
Article
Materials Science, Multidisciplinary
Xiaoning Sun et al.
Summary: Vanadium dioxide undergoes reversible transition from insulating to metallic phase when triggered by stimuli such as heat and electric fields. This study used a hydrothermal method to prepare nano-VO2 particles with phase transition characteristics, and established models for electro-induced phase transition in VO2-filled Polyethylene glycol. The analysis revealed the impact of electrode-gap effect on phase-transition voltage and examined the formation of high-temperature conductive channels during the electro-induced phase transition.
MATERIALS RESEARCH EXPRESS
(2021)
Article
Chemistry, Multidisciplinary
Yifei Pei et al.
Summary: The visual perception system is crucial for human learning, and memristors show potential for efficient processing of natural information. A fully memristor-based artificial visual perception nervous system (AVPNS) successfully emulates functions of the biological visual nervous system, such as image perception, integration, and biosensitization, as well as simulations for speed meeting control systems in driverless automobiles.
Article
Chemistry, Multidisciplinary
Jia-Lin Meng et al.
Summary: This paper proposes a flexible low-dimensional memristor based on boron nitride, which features ultra-low power consumption, reliable digital memcomputing capabilities, and ultrafast neuromorphic computing capabilities. The memristor successfully implements logic-in-memory operations like FALSE, IMP, and NAND, opening up new possibilities for the development of next-generation in-memory computing architectures.
MATERIALS HORIZONS
(2021)
Article
Physics, Applied
Zhen Jin et al.
APPLIED PHYSICS LETTERS
(2020)
Article
Nanoscience & Nanotechnology
Yunzhou Xue et al.
Review
Nanoscience & Nanotechnology
Vinod K. Sangwan et al.
NATURE NANOTECHNOLOGY
(2020)
Article
Nanoscience & Nanotechnology
Dian Li et al.
ACS APPLIED MATERIALS & INTERFACES
(2020)
Article
Chemistry, Physical
Jia-Qin Yang et al.
Article
Materials Science, Multidisciplinary
Lu Li et al.
JOURNAL OF MATERIALS CHEMISTRY C
(2020)
Article
Nanoscience & Nanotechnology
Donguk Lee et al.
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Chemistry, Multidisciplinary
Wei Yu et al.
ADVANCED MATERIALS
(2019)
Review
Nanoscience & Nanotechnology
Rui Yang et al.
ADVANCED ELECTRONIC MATERIALS
(2019)
Article
Chemistry, Physical
Georgy V. Pushkarev et al.
PHYSICAL CHEMISTRY CHEMICAL PHYSICS
(2019)
Article
Engineering, Electrical & Electronic
S. Lashkare et al.
IEEE ELECTRON DEVICE LETTERS
(2018)
Article
Chemistry, Multidisciplinary
Mongur Hossain et al.
ADVANCED MATERIALS INTERFACES
(2018)
Article
Materials Science, Multidisciplinary
Junghyeok Kwak et al.
JOURNAL OF MATERIALS CHEMISTRY C
(2018)
Article
Engineering, Electrical & Electronic
Akhilesh Jaiswal et al.
IEEE TRANSACTIONS ON ELECTRON DEVICES
(2017)
Article
Nanoscience & Nanotechnology
Carsten Funck et al.
ADVANCED ELECTRONIC MATERIALS
(2016)
Article
Engineering, Electrical & Electronic
Maruan Al-Shedivat et al.
IEEE JOURNAL ON EMERGING AND SELECTED TOPICS IN CIRCUITS AND SYSTEMS
(2015)
Review
Chemistry, Multidisciplinary
Manish Chhowalla et al.