Chemical-vapor-deposited 2D VSe2 nanosheet with threshold switching behaviors for Boolean logic calculations and leaky integrate-and-fire functions

The leaky integrate-and-fire (LIF) model of artificial neurons has been widely studied owing to its potential applications in performing signal integration, firing function and the decay of local gradient potential in artificial neural networks. The threshold switching (TS) memristors have been considered to be one of the most promising candidates for simulating LIF activity owing to its self-resetting property. In this work, VSe2 nanosheets are synthesized by the chemical vapor deposition method and the phase transition from the 1T to 2H is achieved in the prepared nanosheets through an annealing method. The annealed VSe2 nanosheets demonstrate decent and reliable TS behaviors with good endurance, repeatability and good environmental stability. The VSe2 memristor not only demonstrates the possibility to realize the logic operations of NOT, AND and OR, but also provides a promising solution for the simulation. This work presents a feasible approach to TS behaviors, which broadens the applications of VSe2 materials and provides potential candidates for realization of Boolean logic calculations and LIF functions.

Automated summary

In this study, VSe2 nanosheets were synthesized using chemical vapor deposition and underwent a phase transition from 1T to 2H through annealing. The annealed VSe2 nanosheets exhibited reliable threshold switching (TS) behavior with good endurance, repeatability, and environmental stability. The VSe2 memristor demonstrated the ability to perform logic operations and simulate leaky integrate-and-fire (LIF) activity. This research provides a feasible approach to TS behaviors, expanding the applications of VSe2 materials and offering potential candidates for Boolean logic calculations and LIF functions.