Gate-defined two-dimensional hole and electron systems in an undoped InSb quantum well

Quantum transport measurements are performed in gate-defined, high-quality, two-dimensional hole and electron systems in an undoped InSb quantum well. For both polarities, the carrier systems show tunable spin-orbit interaction as extracted from weak antilocalization measurements. The effective mass of InSb holes strongly increases with carrier density as determined from the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field are performed to estimate the spin susceptibility of the InSb two-dimensional hole system. The g factor of the two-dimensional hole system decreases rapidly with increasing carrier density.

Automated summary

Quantum transport measurements were conducted in undoped InSb quantum wells with high-quality, gate-defined two-dimensional hole and electron systems. The carrier systems in both polarities exhibited tunable spin-orbit interactions, as determined through weak antilocalization measurements. The effective mass of InSb holes increased significantly with carrier density, as evidenced by the temperature dependence of Shubnikov-de Haas oscillations. Coincidence measurements in a tilted magnetic field were used to estimate the spin susceptibility of the InSb two-dimensional hole system, which showed a rapid decrease in the g factor with increasing carrier density.