Single-crystal growth and physical properties of LaMn0.86Sb2

Single crystals of LaMn0.86Sb2 were synthesized via the flux method. Band structure calculation indicates the existence of Dirac dispersion below the Fermi level as expected for the square-net-based materials. Magneti-zation in combination with neutron diffraction measurements suggests that the magnetic structure below TN = 146 K can be described by a G-type antiferromagnetic structure with a weak spin canting. A spin-flop transition was observed when external magnetic fields were applied parallel to the c axis. Negative magnetoresistance is observed at low temperatures, likely originating from the spin alignment effect. Our results indicate that LaMn1-xSb2 has Dirac dispersion and a vacancy tunable magnetism, which could be a potential platform for studying the interplay of magnetism, charge transport, and possible topological band.

Automated summary

Single crystals of LaMn0.86Sb2 were synthesized using the flux method. Band structure calculations confirmed the presence of Dirac dispersion below the Fermi level, as expected for square-net-based materials. Magnetization measurements and neutron diffraction analysis revealed a G-type antiferromagnetic structure with weak spin canting below TN = 146 K. A spin-flop transition was observed with external magnetic fields applied parallel to the c-axis. Negative magnetoresistance at low temperatures suggests a spin alignment effect. LaMn1-xSb2 demonstrates Dirac dispersion and tunable magnetism due to vacancies, making it a potential platform for studying the interplay of magnetism, charge transport, and topological bands.