EFFICIENCY AND RADIATIVE RECOMBINATION RATE ENHANCEMENT IN GAN/ALGAN MULTI-QUANTUM WELL-BASED ELECTRON BLOCKING LAYER FREE UV-LED FOR IMPROVED LUMINESCENCE

In this paper, an electron blocking layer (EBL) free GaN/AlGaN light emitting diode (LED) is designed using Atlas TCAD with graded composition in the quantum barriers of the active region. The device has a GaN buffer layer incorporated in a c-plane for better carrier transportation and low efficiency droop. The proposed LED has quantum barriers with aluminium composition graded from 20% to similar to 2% per triangular, whereas the conventional has square barriers. The resulted structures exhibit significantly reduced electron leakage and improved hole injection into the active region, thus generating higher radiative recombination. The simulation outcomes exhibit the highest internal quantum efficiency (IQE) (48.4%) indicating a significant rise compared to the conventional LED. The designed EBL free LED with graded quantum barrier structure acquires substantially minimized efficiency droop of similar to 7.72% at 60 mA. Our study shows that the proposed structure has improved radiative recombination by similar to 136.7%, reduced electron leakage, and enhanced optical power by similar to 8.084% at 60 mA injected current as compared to conventional GaN/AlGaN EBL LED structure.

Automated summary

In this study, a GaN/AlGaN light emitting diode (LED) without an electron blocking layer (EBL) is designed with a graded composition in the quantum barriers of the active region. The proposed LED incorporates a GaN buffer layer in a c-plane to enhance carrier transportation and reduce efficiency droop. Compared to the conventional LED with square barriers, the designed LED has quantum barriers with aluminium composition graded from 20% to about 2% per triangular. The simulation results show that the designed LED achieves a higher internal quantum efficiency (IQE) of 48.4%, significantly reducing efficiency droop to about 7.72% at 60 mA injected current compared to the conventional LED. Moreover, the proposed LED structure improves radiative recombination by approximately 136.7%, reduces electron leakage, and enhances optical power by about 8.084% at 60 mA injected current as compared to the conventional GaN/AlGaN EBL LED structure.