Two-Time Intensity Correlation in a Driven V-Type Quantum Emitter Near a Plasmonic Nanostructure

We analyze the two-time intensity correlation function of the fluorescent field emitted by a three-level V-type quantum emitter located in the vicinity of a two-dimensional periodic plasmonic nanostructure. Due to the interaction of the quantum emitter with an electromagnetic field, the ground state population is excited to the upper levels, presenting decay due to spontaneous emission. The distinctive characteristic of this system is that the decay rates for a quantum emitter with dipole orientation parallel and normal to the surface of the nanostructure array exhibit large differences which vary with the distance between the quantum emitter and the two-dimensional nanoparticle array. This leads to simulation of quantum interference effects in spontaneous emission. By studying the dependence of the two-time intensity correlation function on specific physical parameters of the hybrid structure, including the intensity of the applied field, the detuning from resonance, the distance between the quantum emitter and the plasmonic nanostructure, as well as the spacing between the upper levels, we demonstrate a strong modification of the two-time intensity correlation functions. We also identify the conditions under which the two-time intensity correlation function is maximized, an effect which is associated to the bunching to antibunching transition of the emitted photons.

Automated summary

We analyze the two-time intensity correlation function of a fluorescent field emitted by a three-level V-type quantum emitter near a two-dimensional periodic plasmonic nanostructure. The decay rates for a quantum emitter with different dipole orientations and the distance between the quantum emitter and the nanoparticle array lead to simulation of quantum interference effects. We demonstrate a strong modification of the two-time intensity correlation functions by studying specific physical parameters of the hybrid structure.