4.7 Article

Vacancy designed 2D materials for electrodes in energy storage devices

Journal

CHEMICAL COMMUNICATIONS
Volume 59, Issue 41, Pages 6109-6127

Publisher

ROYAL SOC CHEMISTRY
DOI: 10.1039/d3cc00815k

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Vacancies play a crucial role in determining the behavior of materials and researchers have introduced vacancies into 2D materials to achieve high-performance electrodes for energy storage. This article focuses on recent advances in vacancy engineering of 2D materials for supercapacitors and secondary batteries. Vacancy defects enhance charge-transfer processes and serve as additional host sites for ion diffusion. The article also summarizes the development of defect creation approaches and detection techniques for vacancies in these materials.
Vacancies are ubiquitous in nature, usually playing an important role in determining how a material behaves, both physically and chemically. As a consequence, researchers have introduced oxygen, sulphur and other vacancies into bi-dimensional (2D) materials, with the aim of achieving high performance electrodes for electrochemical energy storage. In this article, we focused on the recent advances in vacancy engineering of 2D materials for energy storage applications (supercapacitors and secondary batteries). Vacancy defects can effectively modify the electronic characteristics of 2D materials, enhancing the charge-transfer processes/reactions. These atomic-scale defects can also serve as extra host sites for inserted protons or small cations, allowing easier ion diffusion during their operation as electrodes in supercapacitors and secondary batteries. From the viewpoint of materials science, this article summarises recent developments in the exploitation of vacancies (which are surface defects, for these materials), including various defect creation approaches and cutting-edge techniques for detection of vacancies. The crucial role of defects for improvement in the energy storage performance of 2D electrode materials in electrochemical devices has also been highlighted.

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