Rhodium-embedded UV photodetectors based on localized surface plasmon resonance on AlN/GaN

We report a remarkably enhanced responsivity of metal-semiconductor-metal photodetectors embedded with a large-scale periodicity and highly uniform rhodium nanoparticle array based on localized surface plasmon resonance. In this study, we used theoretical simulations of the absorption, scattering, and extinction behaviors, as well as the near electromagnetic field distributions to predict the plasmon resonance wavelength of quasi-triangular-shaped rhodium nanoparticles. More specifically, we successfully implemented a hexagonal close-packed structure with the individual quasi-triangular-shaped rhodium nanoparticle on the AlN/GaN structure by self-assembly nanosphere technology. The characterization results showed that the device embedded with rhodium nanoparticles had a reduced dark current of 7 x 10(-14) A, and the maximum responsivity was shifted to a longer wavelength of approximately 310 nm compared to the device without rhodium nanoparticles. Moreover, at a wavelength of 324 nm, the enhancement ratio of the responsivity was as high as 56. Our study makes a significant contribution to the literature with a highly uniform, large-scale distributed rhodium nanoparticle array for enhancing the performance of AlGaN-based photodetectors in the UV region.

Automated summary

We achieved remarkably enhanced responsivity in metal-semiconductor-metal photodetectors by embedding highly uniform rhodium nanoparticle arrays with large-scale periodicity through localized surface plasmon resonance. Theoretical simulations and experimental results confirmed the improved performance, with a reduced dark current, a shifted maximum responsivity wavelength, and a highly increased enhancement ratio at a specific wavelength. This study contributes significantly to the literature by presenting a novel approach to enhance the performance of AlGaN-based photodetectors in the UV region using a large-scale distributed rhodium nanoparticle array.