Characterization of GaN structures for power electronics by secondary ion mass spectrometry and atomic force microscope approach

Article Chemistry, Physical

H3PO4-based wet chemical etching for recovery of dry-etched GaN surfaces

Sabria Benrabah et al.

Summary: This study explores the impact of several wet etchants commonly encountered in the microelectronic industry on the surface chemistry of GaN on silicon. Phosphoric acid treatment is found to significantly modify the surface and enable the recovery of the surface morphology. The study proposes a promising treatment method for the recovery of good quality GaN surfaces after dry etching.

APPLIED SURFACE SCIENCE (2022)

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Article Materials Science, Coatings & Films

Atomic layer etching of GaN using Cl2 and He or Ar plasma

Simon Ruel et al.

Summary: In this paper, the plasma-etching steps during the fabrication of a MOS-HEMT were investigated for their potential damage to GaN materials. The study compared the Cl-2-based atomic layer etching (ALE) process with He or Ar as the sputtering gas, examining the self-limiting synergy and process window of ALE. A comparison was also made to a steady-state process, evaluating roughness and electrical measurements to assess induced damage.

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A (2021)

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Review Nanoscience & Nanotechnology

Recent Advances in GaN-Based Power HEMT Devices

Jiaqi He et al.

Summary: This review discusses various effective approaches to enhance the performance of GaN-based power HEMTs, such as modified epistructures, recess-free processes, dielectric effects on MIS structure, metal/semiconductor contact engineering, and field plate effects.

ADVANCED ELECTRONIC MATERIALS (2021)

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Article Engineering, Electrical & Electronic

Study of an Al2O3/GaN Interface for Normally Off MOS-Channel High-Electron-Mobility Transistors Using XPS Characterization: The Impact of Wet Surface Treatment on Threshold Voltage VTH

Laura Vauche et al.

Summary: Understanding the impact of GaN surface treatment conditions on dielectric/GaN interface chemical properties is crucial for device performance. Different wet treatments were studied prior to ALD of thin Al2O3 on Ga-polar GaN, and the results were correlated to the threshold voltage and donor defects in the resulting transistors. Wet treatments were also applied to AlGaN/GaN heterostructures for forming MOS-channel HEMTs on 200 mm GaN-on-Si wafers with CMOS compatible processing.

ACS APPLIED ELECTRONIC MATERIALS (2021)

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Article Engineering, Electrical & Electronic