4.6 Article

Investigation of n-ZnO/p-Si and n-TiO2/p-Si Heterojunction Solar Cells: TCAD plus DFT

Journal

IEEE ACCESS
Volume 11, Issue -, Pages 38970-38981

Publisher

IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
DOI: 10.1109/ACCESS.2023.3268033

Keywords

Photovoltaic cells; Zinc oxide; II-VI semiconductor materials; Metals; Silicon; Heterojunctions; Discrete Fourier transforms; Numerical simulation; heterojunctions; silicon; density functional theory; titanium dioxide; zinc oxide

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This paper focuses on exploring new materials and structure to enhance the efficiency of solar cells, specifically by studying ZnO/Si and TiO2/Si heterojunction solar cells. The electrical and optical properties of ZnO and TiO2 were determined using different functionals in Density Functional Theory (DFT). It was found that TiO2 can be used as a transparent contact and ZnO as an emitter layer in a silicon-based solar cell.
This paper focuses on exploring new materials and structure as a means to increase the efficiency of solar cells. Since silicon is widespread on earth, it is desirable to study heterojunction solar cells made mainly of silicon and new materials. Therefore, ZnO/Si and TiO2/Si heterojunction solar cells were studied in this paper. First, the electrical and optical properties of ZnO and TiO2 were determined using the Perdew-Burke-Ernzerhof (PBE), PBE functional revised for solids (PBESol) and Perdew-Wang (PW91) functionals of the Generalized gradient approximation (GGA) in Density Functional Theory (DFT). The obtained results in various functionals are assessed and analyzed. It was found that geometric optimized structures of TiO2 and ZnO is mechanical stable. Accordingly, in all functionals, the effective mass of the electron in ZnO and TiO2 proved to be smaller than that of the hole. The mobility of electrons and holes in ZnO was calculated to be 430.72 cm2V-1s(-1)and 5.25 cm2V-1s(-1)respectively. In TiO2, it was 355.27 cm2V-1s(-1)and 46.38 cm2V-1s(-1). When PW91, PBESol, PBE functionals were used, the dielectric constant was determined to be 11, 11.5, 8.5 for ZnO and 9.5, 10, 9 for TiO2, respectively. According to the DFT results, it was determined that ZnO and TiO2 are transparent and mainly n-type direct semiconductors. According to device simulation, the maximum short-circuit current of ZnO/Si and TiO2/Si heterojunction solar cells is 18 mA/cm(2) at a thickness of 80 nm and 15.3 mA/cm(2) at a thickness of 40 nm. Finally, the average fill factor of ZnO/Si and TiO2/Si solar cells was 0.73 and 0.76 respectively. So TiO2 can be used as a transparent contact and ZnO as an emitter layer in a silicon-based solar cell.

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