Low-temperature growth of InAs/GaSb superlattices on miscut GaAs substrates for mid-wave infrared detectors

Short-period 10 monolayers InAs/10ML GaSb type-II superlattices have been deposited on a highly lattice-mismatched GaAs (001), 2 degrees offcut towards <110> substrates by molecular beam epitaxy. This superlattice was designed for detection in the mid-wave infrared spectral region (cut-off wavelength, lambda cut-off= 5.4 mu m at 300 K). The growth was performed at relatively low temperatures. The InAs/GaSb superlattices were grown on a GaSb buffer layer by an interfacial misfit array in order to relieve the strain due to the-7.6% lattice-mismatch between the GaAs substrate and type-II superlattices. The X-ray characterisation reveals a good crystalline quality exhibiting full width at half maximum-100 arcsec of the zero-order peak. Besides, the grown samples have been found to exhibit a change in the conductivity.

Automated summary

In this study, short-period 10 monolayers InAs/10ML GaSb type-II superlattices were grown on a highly lattice-mismatched GaAs substrate using molecular beam epitaxy at relatively low temperatures. X-ray characterization revealed good crystalline quality and a change in conductivity was observed in the grown samples.