Interface-relevant out-of-plane spin polarization in IrMn3/permalloy bilayers

Out-of-plane spin polarization (crz) has potential applications for magnetic memory with high storage density and low energy consumption. Several noncollinear antiferromagnets have been confirmed to generate crz due to their triangular spin configuration on kagome planes, including IrMn3. Apart from the spin configuration of the (110)-oriented IrMn3, we demonstrate that the interface of IrMn3/permalloy also contributes to the generation of crz. With Cu insertion between IrMn3 and permalloy, interfacial crz vanishes, which further supports the interfacial origin of crz. We are not only convinced that the interface-relevant crz is independent of exchange coupling between IrMn3 and permalloy but also propose several possible origins of interface-relevant crz. Our findings enrich the understanding of generating crz in antiferromagnets/ferromagnets bilayers. The interface-relevant crz broadens the scope of material design and proposes a potential path to optimize magnetic memories with low power consumption.

Automated summary

Out-of-plane spin polarization (crz), generated by triangular spin configuration in non-collinear antiferromagnets, including IrMn3, has potential applications for magnetic memory. Our study demonstrates that the interface between IrMn3 and permalloy also contributes to the generation of crz, and interfacial crz can be eliminated by inserting Cu. We propose that the interface-relevant crz is independent of exchange coupling and suggest possible origins. These findings enrich the understanding of crz in antiferromagnet/ferromagnet bilayers and propose a potential path for optimizing low-power magnetic memories.