High-quality SiNx thin-film growth at 300 °C using atomic layer deposition with hollow-cathode plasma

We report high-quality atomic-layer-deposited SiNx thin films using a novel remote plasma source, hollow cathode plasma (HCP), at a low temperature of 300 & DEG;C. SiNx films using the HCP source show superior properties to those deposited using inductively-coupled plasma (ICP), a conventional remote plasma source. X-Ray photoelectron spectroscopy and Auger electron spectroscopy analyses reveal that the SiNx film grown using the HCP source has a higher N/Si ratio, a lower oxygen impurity concentration, and outstanding oxidation resistance. The wet etch rate of HCP SiNx films is significantly improved compared with that of ICP SiNx films. In addition, the HCP SiNx films exhibit superb electrical properties, such as the dielectric constant, gate leakage current, and dielectric breakdown field.

Automated summary

We have successfully fabricated high-quality atomic-layer-deposited SiNx thin films at a low temperature of 300℃ using a novel remote plasma source called hollow cathode plasma (HCP). Compared to SiNx films deposited using the conventional remote plasma source, inductively-coupled plasma (ICP), the SiNx films grown using the HCP source exhibit superior properties. They have a higher N/Si ratio, lower oxygen impurity concentration, and exceptional oxidation resistance. Additionally, the HCP SiNx films show improved wet etch rate and excellent electrical properties, such as dielectric constant, gate leakage current, and dielectric breakdown field.