Dislocation-related photoluminescence in self-implanted silicon with different surface orientation

The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent annealing are studied. It is shown that the luminescent properties of the samples depend both on surface orientation and on annealing temperature. For a silicon sample with (111) surface orientation, under certain heat treatment conditions, an anomalous temperature dependence of the D1 line intensity is demonstrated with the appearance of a second maximum in this dependence at temperatures of about 80 K.

Automated summary

The regularities of the influence of initial substrate orientation and annealing conditions on the intensity and temperature dependence of the D1 luminescence line for the p-type silicon samples implanted with silicon ions followed by subsequent annealing were studied. It was found that the luminescent properties of the samples depended on both surface orientation and annealing temperature. For a silicon sample with (111) surface orientation, under certain heat treatment conditions, an anomalous temperature dependence of the D1 line intensity was demonstrated with the appearance of a second maximum at temperatures around 80 K.