Unveiling Retention Physical Mechanism of Ge-rich GST ePCM Technology

In this work, a comprehensive study of Ge-rich Phase Change Memory set and reset state retention realized by coupling electrical and physical characterizations is presented. The presence of amorphous residuals inside the active region of PCM devices is, for the first time, demonstrated through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied by means of electrical characterization and supported by modeling analysis. By comparing the low and high state resistive behavior the retention physics has been analytically modeled with the same framework for both states.

Automated summary

This work presents a comprehensive study on the retention of set and reset states in Ge-rich Phase Change Memory by coupling electrical and physical characterizations. The presence of amorphous residuals inside the active region of PCM devices is demonstrated for the first time through High Resolution Scanning Transmission Electron Microscopy. The role of such formations was studied using electrical characterization and supported by modeling analysis. The retention physics has been analytically modeled with the same framework for both low and high state resistive behavior.