Related references
Note: Only part of the references are listed.Absolute terahertz power measurement of a time-domain spectroscopy system
Bjoern Globisch et al.
OPTICS LETTERS (2015)
Carrier dynamics in Beryllium doped low-temperature-grown InGaAs/InAlAs
B. Globisch et al.
APPLIED PHYSICS LETTERS (2014)
Terahertz-time domain spectrometer with 90 dB peak dynamic range
N. Vieweg et al.
JOURNAL OF INFRARED MILLIMETER AND TERAHERTZ WAVES (2014)
Influence and adjustment of carrier lifetimes in InGaAs/InAlAs photoconductive pulsed terahertz detectors: 6 THz bandwidth and 90dB dynamic range
Roman J. B. Dietz et al.
OPTICS EXPRESS (2014)
Characterization of low temperature InGaAs-InAlAs semiconductor photo mixers at 1.55 μm wavelength illumination for terahertz generation and detection
I. Kostakis et al.
JOURNAL OF APPLIED PHYSICS (2012)
Terahertz Generation and Detection Using Low Temperature Grown InGaAs-InAlAs Photoconductive Antennas at 1.55 μm Pulse Excitation
Ioannis Kostakis et al.
IEEE TRANSACTIONS ON TERAHERTZ SCIENCE AND TECHNOLOGY (2012)
Tunable, continuous-wave Terahertz photomixer sources and applications
S. Preu et al.
JOURNAL OF APPLIED PHYSICS (2011)
Semiconductors for terahertz photonics applications
Arunas Krotkus
JOURNAL OF PHYSICS D-APPLIED PHYSICS (2010)
Next generation 1.5 μm terahertz antennas: mesa-structuring of InGaAs/InAlAs photoconductive layers
H. Roehle et al.
OPTICS EXPRESS (2010)
All-fiber terahertz time-domain spectrometer operating at 1.5 μm telecom wavelengths
B. Sartorius et al.
OPTICS EXPRESS (2008)
Terahertz wave emission and detection using photoconductive antennas made on low-temperature-grown InGaAs with 1.56 μm pulse excitation
A. Takazato et al.
APPLIED PHYSICS LETTERS (2007)
Detection of terahertz waves using low-temperature-grown InGaAs with 1.56 μm pulse excitation
A. Takazato et al.
APPLIED PHYSICS LETTERS (2007)
Two-trap model for carrier lifetime and resistivity behavior in partially annealed GaAs grown at low temperature
IS Gregory et al.
PHYSICAL REVIEW B (2006)
All-optoelectronic terahertz system using low-temperature-grown InGaAs photomixers
C Baker et al.
OPTICS EXPRESS (2005)
Agglomeration of as antisites in as-rich low-temperature GaAs: Nucleation without a critical nucleus size - art. no. 1255020
TEM Staab et al.
PHYSICAL REVIEW LETTERS (2005)
High resistivity annealed low-temperature GaAs with 100 fs lifetimes
IS Gregory et al.
APPLIED PHYSICS LETTERS (2003)
Be-doped low-temperature-grown GaAs material for optoelectronic switches
A Krotkus et al.
IEE PROCEEDINGS-OPTOELECTRONICS (2002)
Ultrafast optical nonlinearity of low-temperature-grown GaInAs/AlInAs quantum wells at wavelengths around 1.55 μm
K Biermann et al.
APPLIED PHYSICS LETTERS (2002)
Does beryllium doping suppress the formation of Ga vacancies in nonstoichiometric GaAs layers grown at low temperatures?
J Gebauer et al.
APPLIED PHYSICS LETTERS (2001)
Low-temperature MBE growth and characteristics of InP-based AlInAs/GaInAs MQW structures
H Kuenzel et al.
JOURNAL OF CRYSTAL GROWTH (2001)