Journal
AIP ADVANCES
Volume 6, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4942819
Keywords
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Funding
- Research Council of Lithuania [MIP-058/2014]
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We describe a terahertz time-domain-spectroscopy system that is based on photoconductive components fabricated from (GaIn)(AsBi) epitaxial layers and activated by femtosecond 1.55 mu m pulses emitted by an Er-doped fiber laser. (GaIn)(AsBi) alloy grown on GaAs substrates contained 12.5% In and 8.5% Bi - a composition corresponding to a symmetrical approach of the conduction and valence band edges to each other. The layers were photosensitive to 1.55 mu m wavelength radiation, had relatively large resistivities, and subpicosecond carrier lifetimes - a set of material parameters necessary for fabrication of efficient ultrafast photoconductor devices. The frequency limit of this system was 4.5 THz, its signal-to-noise ratio 65 dB. These parameters were comparable to their typical values for much bulkier solid-state laser based systems. (C) 2016 Author(s).
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