Journal
AIP ADVANCES
Volume 6, Issue 2, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4941934
Keywords
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Funding
- National Science Foundation under Faculty Early Career Development Program [CMMI- 1351817]
- National Science Foundation through the University of Minnesota MRSEC [DMR-1420013]
- Directorate For Engineering
- Div Of Civil, Mechanical, & Manufact Inn [1560834] Funding Source: National Science Foundation
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The III-Nitrides are promising candidate for high efficiency thermoelectric (TE) materials and devices due to their unique features which includes high thermal stability. A systematic study of the room temperature TE properties of metalorganic chemical vapor deposition grown InxGa1-xN were investigated for x= 0.07 to 0.24. This paper investigated the role of indium composition on the TE properties of InGaN alloys in particular the structural properties for homogenous material that did not show significant phase separation. The highest Seebeck and power factor values of 507 mu VK-1 and 21.84 x 10(-4) Wm(-1)K(-1) were observed, respectively for In0.07Ga0.93N at room temperature. The highest value of figure-of-merit (ZT) was calculated to be 0.072 for In0.20Ga0.80N alloy at room temperature. (C) 2016 Author(s).
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