Related references
Note: Only part of the references are listed.White-light-induced disruption of nanoscale conducting filament in hafnia
Y. Zhou et al.
APPLIED PHYSICS LETTERS (2015)
Thermally Stable Transparent Resistive Random Access Memory based on All-Oxide Heterostructures
Jie Shang et al.
ADVANCED FUNCTIONAL MATERIALS (2014)
Effect of oxide/oxide interface on polarity dependent resistive switching behavior in ZnO/ZrO2 heterostructures
Zedong Xu et al.
APPLIED PHYSICS LETTERS (2014)
Joint contributions of Ag ions and oxygen vacancies to conducting filament evolution of Ag/TaOx/Pt memory device
Yu-Lung Chung et al.
JOURNAL OF APPLIED PHYSICS (2014)
Recent progress in resistive random access memories: Materials, switching mechanisms, and performance
F. Pan et al.
MATERIALS SCIENCE & ENGINEERING R-REPORTS (2014)
Defect Engineering Using Bilayer Structure in Filament-Type RRAM
Daeseok Lee et al.
IEEE ELECTRON DEVICE LETTERS (2013)
Bipolar resistive switching characteristics in CuO/ZnO bilayer structure
F. Yang et al.
JOURNAL OF APPLIED PHYSICS (2013)
Oxide Heterostructure Resistive Memory
Yuchao Yang et al.
NANO LETTERS (2013)
Memristive devices for computing
J. Joshua Yang et al.
NATURE NANOTECHNOLOGY (2013)
Nonvolatile Memristive Switching Characteristics of TiO2 Films Embedded With Nickel Nanocrystals
Debashis Panda et al.
IEEE TRANSACTIONS ON NANOTECHNOLOGY (2012)
Redox-Based Resistive Switching Memories - Nanoionic Mechanisms, Prospects, and Challenges
Rainer Waser et al.
ADVANCED MATERIALS (2009)
Local structure and conduction mechanism in amorphous In-Ga-Zn-O films
Deok-Yong Cho et al.
APPLIED PHYSICS LETTERS (2009)
Fully Room-Temperature-Fabricated Nonvolatile Resistive Memory for Ultrafast and High-Density Memory Application
Yu Chao Yang et al.
NANO LETTERS (2009)