Journal
AIP ADVANCES
Volume 6, Issue 1, Pages -Publisher
AMER INST PHYSICS
DOI: 10.1063/1.4939939
Keywords
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Funding
- Ministry of Education, Culture, Sports, Science and Technology (MEXT) though Element Strategy Initiative to Form Core Research Center
- ACCEL Project - Japan Science and Technology Agency (JST)
- Japan Society for the Promotion of Science (JSPS) [25106007]
- Support for Tokyotech Advanced Research (STAR)
- Grants-in-Aid for Scientific Research [15H06207, 25106007] Funding Source: KAKEN
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We propose a light-emitting thin film using an amorphous oxide semiconductor (AOS) because AOS has low defect density even fabricated at room temperature. Eu-doped amorphous In-Ga-Zn-O thin films fabricated at room temperature emitted intense red emission at 614 nm. It is achieved by precise control of oxygen pressure so as to suppress oxygen-deficiency/excess-related defects and free carriers. An electronic structure model is proposed, suggesting that non-radiative process is enhanced mainly by defects near the excited states. AOS would be a promising host for a thin film phosphor applicable to flexible displays as well as to light-emitting transistors. (C) 2016 Author(s).
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