4.4 Article

Material characteristics and equivalent circuit models of stacked graphene oxide for capacitive humidity sensors

Journal

AIP ADVANCES
Volume 6, Issue 3, Pages -

Publisher

AMER INST PHYSICS
DOI: 10.1063/1.4943509

Keywords

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Funding

  1. Center for Advanced Soft-Electronics - Ministry of Science, ICT and Future Planning as Global Frontier Project [CASE-2011-0031638]
  2. Basic Science Research Program through the National Research Foundation of Korea (NRF) - Ministry of Science, ICT & Future Planning [2014R1A1A1004770]
  3. Pioneer Research Center Program through the NRF - Ministry of Science, ICT & Future Planning [NRF-2013M3C1A3065040]
  4. National Research Foundation of Korea [2014R1A1A1004770] Funding Source: Korea Institute of Science & Technology Information (KISTI), National Science & Technology Information Service (NTIS)

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The oxidation properties of graphene oxide (GO) are systematically correlated with their chemical sensing properties. Based on an impedance analysis, the equivalent circuit models of the capacitive sensors are established, and it is demonstrated that capacitive operations are related to the degree of oxidation. This is also confirmed by X-ray diffraction and Raman analysis. Finally, highly sensitive stacked GO sensors are shown to detect humidity in capacitive mode, which can be useful in various applications requiring low power consumption. (C) 2016 Author(s).

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