Low power highly flexible BiFeO3-based resistive random access memory (RRAM) with the coexistence of negative differential resistance (NDR)

We demonstrated the resistive random access memory characteristics for Cu (top contact)/BFO/PMMA (active layer)/ITO (bottom electrode)/PET sheet as a flexible substrate device configuration. The device showed non-volatile bipolar resistive switching characteristics with good repeatability and the coexistence of NDR for 100 cycles or more with 0.28/3.43 mW power consumption for 1(st)/100(th) cycles. The device retains its read state for 10(4) s or more and switches from LRS to HRS or vice versa for 10(3) cycles with a pulse width of 100 ms for a write-read-erase-read pulse without affecting the memory characteristics. The Weibull distribution suggests that a set state is more stable than the reset state with shape factor & beta; = 25.20. The device follows Ohmic behavior for the lower applied external field and Child square and Schottky emission for the higher external fields. The Joule heating, Sorets, and Fick's forces are responsible for the formation and rupturing of ionic filament. The coexistence of resistive switching and flexible strength of the device sustains the bending curvature of infinity, 0.2 cm, 1 cm, 1.7 cm, and 2.2 cm. The memory characteristics are retained under tensile conditions for 100 cycles or more. More interestingly, the power consumption for sustaining the NDR region with bending (19 & mu;W) is much lower than without bending (0.19 mW). Thus, this study provides the possibility of integrating BFO with flexible substrates suitable for hybrid organic/inorganic memory structures.

Automated summary

In this study, the resistive random access memory characteristics of a Cu/BFO/PMMA/ITO/PET device configuration were demonstrated on a flexible substrate. The device exhibited non-volatile bipolar resistive switching with good repeatability and coexistence of NDR for 100 cycles or more. The device retained its read state for 10^4 seconds or more and successfully switched between states without affecting memory characteristics. The study also showed the possibility of integrating BFO with flexible substrates for hybrid organic/inorganic memory structures.