Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems

Lateral electrochemical metallization (ECM) cells are fabricated with a combined spacer/damascene process. The process allows the realization of nanoscale geometrical distances between the two electrodes independent of lithography. Such lateral ECM cells are an essential part in a reconfigurable interconnect system that may yield a strongly increased connectivity in artificial neural networks. The lateral cells show memristive properties comparable to vertical cells with switching voltages in the range of -1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of such lateral cells is investigated via kinetic Monte Carlo simulations, finding a minor influence on SET time variability.

Automated summary

Lateral electrochemical metallization (ECM) cells with nanoscale geometrical distances between electrodes independent of lithography are crucial for reconfigurable interconnect systems in artificial neural networks. These cells exhibit memristive properties similar to vertical cells, with switching voltages ranging from -1.5V to 2.5V. The influence of electrode line edge roughness on SET kinetics of lateral cells is found to have minimal impact through kinetic Monte Carlo simulations.