Journal
SCIENTIFIC REPORTS
Volume 6, Issue -, Pages -Publisher
NATURE PUBLISHING GROUP
DOI: 10.1038/srep23486
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Funding
- State Key Program for Basic Research of China [2011CB301900, 2011CB922100, 2014CB339800]
- National Natural Science Foundation of China [61274058, 61322403, 61371035]
- National Instrumentation Program of China [2012YQ14005]
- Natural Science Foundation of Jiangsu Province, China [BK2011437, BK20130013]
- Fundamental Research Funds for the Central Universities [021014380033]
- Australian Research Council
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Engineering metamaterials with tunable resonances are of great importance for improving the functionality and flexibility of terahertz (THz) systems. An ongoing challenge in THz science and technology is to create large-area active metamaterials as building blocks to enable efficient and precise control of THz signals. Here, an active metamaterial device based on enhancement-mode transparent amorphous oxide thin-film transistor arrays for THz modulation is demonstrated. Analytical modelling based on full-wave techniques and multipole theory exhibits excellent consistent with the experimental observations and reveals that the intrinsic resonance mode at 0.75 THz is dominated by an electric response. The resonant behavior can be effectively tuned by controlling the channel conductivity through an external bias. Such metal/oxide thin-film transistor based controllable metamaterials are energy saving, low cost, large area and ready for mass-production, which are expected to be widely used in future THz imaging, sensing, communications and other applications.
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